About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

TDMAGe, (Me2N)4Ge, [(CH3)2N]4Ge, Tetrakis(DiMethylAmido) Germanium, Germanium Dimethylamide, CAS# 7344-40-3

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 5 record(s).

NumberTitle
1Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
2GeSbTe deposition for the PRAM application
3Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
4GeSbTe deposition for the PRAM application
5Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications