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Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:89
Date:
2015-02-12
DOI:
http://dx.doi.org/10.1186/s11671-015-0815-5

Author Information

Name Institution
Sannian SongChinese Academy of Sciences
Dongning YaoChinese Academy of Sciences
Zhitang SongChinese Academy of Sciences
Lina GaoChinese Academy of Sciences
Zhonghua ZhangChinese Academy of Sciences
Le LiChinese Academy of Sciences
Lanlan ShenChinese Academy of Sciences
Liangcai WuChinese Academy of Sciences
Bo LiuChinese Academy of Sciences
Yan ChengChinese Academy of Sciences
Songlin FengChinese Academy of Sciences

Films

Plasma Sb2Te3

Hardware used: Beneq TFS-500
Tris(DiMethylAmido)Antimony, Sb[(CH3)2N]3, TDMASb
CAS#: 7289-92-1
Di(Tert-Butyl)Telluride, But2Te
CAS#: 83817-35-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 190-250C

Plasma GeSbTe

Hardware used: Beneq TFS-500
TDMAGe, (Me2N)4Ge, [(CH3)2N]4Ge, Tetrakis(DiMethylAmido) Germanium, Germanium Dimethylamide
CAS#: 7344-40-3
Tris(DiMethylAmido)Antimony, Sb[(CH3)2N]3, TDMASb
CAS#: 7289-92-1
Di(Tert-Butyl)Telluride, But2Te
CAS#: 83817-35-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 190-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2400 Source Meter

Characteristic: Electrical Properties
Analysis: R-V, Resistance Voltage Measurements
Diagnostic: Keithley 2400 Source Meter

Characteristic: Morphology, Roughness, Topography
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Si3N4
W

Notes

Beneq TFS 500 PEALD of SbTe and GeSbTe for phase change memory study.
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