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Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition

Type:
Journal
Info:
Superconductor Science and Technology, Volume 30, Number 3
Date:
2016-09-28
DOI:
https://doi.org/10.1088/1361-6668/aa572a

Author Information

Name Institution
Sven LinzenLeibniz Institute of Photonic Technology
Mario ZieglerLeibniz Institute of Photonic Technology
O V AstafievUniversity of London
M SchmelzLeibniz Institute of Photonic Technology
Uwe HübnerLeibniz Institute of Photonic Technology
Marco DiegelLeibniz Institute of Photonic Technology
Evgeni Il'ichevLeibniz Institute of Photonic Technology
Hans-Georg MeyerLeibniz Institute of Photonic Technology

Films

Plasma NbN

Hardware used: Oxford Instruments OpAL
TBTDEN, Tris(diethylamido)(tert-butylimido)niobium
CAS#: 210363-27-2
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Critical Temperature
Analysis: -
Diagnostic: -

Characteristic: Critical Current Density
Analysis: -
Diagnostic: -

Substrates

SiO2

Notes

1151