Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 54, No. 3, pp. 1330-1333
Date:
2008-06-16
Author Information
| Name | Institution |
|---|---|
| Dae-Young Moon | Hanyang University |
| Woong-Sun Kim | Hanyang University |
| Tae-Sub Kim | Hanyang University |
| Byoung-Woo Kang | Hanyang University |
| Jong-Wan Park | Hanyang University |
| Seungjin Yeom | Hynix Semiconductor |
| Jae Hong Kim | Hynix Semiconductor |
Films
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Mobility
Analysis: Hall Measurements
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Substrates
| TiN |
| TaN |
Notes
| 737 |