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Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 54, No. 3, pp. 1330-1333
Date:
2008-06-16
DOI:
http://old.kps.or.kr/jkps/abstract_view.asp?articleuid

Author Information

Name Institution
Dae-Young MoonHanyang University
Woong-Sun KimHanyang University
Tae-Sub KimHanyang University
Byoung-Woo KangHanyang University
Jong-Wan ParkHanyang University
Seungjin YeomHynix Semiconductor
Jae Hong KimHynix Semiconductor

Films

Plasma Cu

Hardware used: Unknown
(HFAC)Cu(VTMOS), hexafluoroacetylacetonato copper vinyltrimethoxysilane
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 180-350C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

TiN
TaN

Notes

737