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Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application

Type:
Journal
Info:
Semicond. Sci. Technol. 25 (2010) 075009 (7pp)
Date:
2010-06-18
DOI:
http://dx.doi.org/10.1088/0268-1242/25/7/075009

Author Information

Name Institution
J. HinzFraunhofer Institute for Integrated Systems and Device Technology (IISB)
Anton J. BauerFraunhofer Institute for Integrated Systems and Device Technology (IISB)
L. FreyFraunhofer Institute for Integrated Systems and Device Technology (IISB)

Films

Plasma NbN

Hardware used: Oxford Instruments FlexAL
Nb(N-tBu)(NMeEt)3, TBTMEN
CAS#: 864150-47-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SOPRA SE-5

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Diagnostic: -

Substrates

Notes

SE model for NbN
64