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Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM

Type:
Journal
Info:
Materials Science in Semiconductor Processing 71 (2017) 433-440
Date:
2017-08-27

Author Information

Name Institution
Ph. RodriguezGrenoble Alps University (UGA)
R. FamulokGrenoble Alps University (UGA)
Y. Le FriecSTMicroelectronics
J.-Ph. ReynardSTMicroelectronics
B.-N. BozonApplied Materials
F. BoyerGrenoble Alps University (UGA)
K. DabertrandSTMicroelectronics
C. JahanGrenoble Alps University (UGA)
S. FavierGrenoble Alps University (UGA)
Y. MazelGrenoble Alps University (UGA)
B. PrevitaliGrenoble Alps University (UGA)
P. GergaudGrenoble Alps University (UGA)
F. NemouchiGrenoble Alps University (UGA)

Films

Plasma W


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Compositional Depth Profiling
Analysis: PPTOFMS, Plasma Profiling Time Of Flight Mass Spectrometry

Characteristic: Compositional Depth Profiling
Analysis: WDXRF, Wavelength Dispersive X-ray Fluorescence

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Contact Resistance
Analysis: Two-point Probe

Substrates

SiO2
W

Notes

1065