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Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage

Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI

Author Information

Name Institution
Antti NiskanenUniversity of Helsinki
Antti RahtuUniversity of Helsinki
Timo SajavaaraUniversity of Helsinki
Kai ArstilaUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki

Films

Plasma Cu

Hardware used: ASM Microchemistry F-120
copper(II) acetylacetonate, bis(2,4-pentanedionato) copper(II), cupric acetylacetonate, Cu(acac)2
CAS#: 13395-16-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Thermomicroscopes Autoprobe CPResearch system

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7400F

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Alessi C4S Four Point Probe

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: -

Substrates

Glass
Silicon
SiLK
Cu
TaN
TiN

Notes

Some of the Si samples were HF etched.
Compares impurities with and without point-of-use gas purifiers
Used Sairem SURF451 surfatron plasma source.
Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers.
Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source.
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