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Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

Type:
Journal
Info:
Plasma Science and Technology, Vol.20, No.3, 2018
Date:
2017-11-23
DOI:
https://doi.org/10.1088/2058-6272/aa9cdf

Author Information

Name Institution
Yuqing XiongLanzhou Institute of Physics
Hengjiao GaoLanzhou Institute of Physics
Ni RenLanzhou Institute of Physics
Zhongwei LiuBeijing Institute of Graphic Communication

Films

Plasma Cu

Hardware used: Custom
Bis(N,N'-di-sec-butylacetamidinato)dicopper(I), copper(I)-N,N'-di-sec-butylacetamidinate
CAS#: 695188-31-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 50-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: RTS-8 Four Point Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco 320 AFM

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG ESCALAB 5

Substrates

Glass

Notes

Compares RF and ECR plasmas.
Iodoethane was used to increase the Cu deposition rate.
Plasma left on for entire deposition for some RF and all ECR experiments. These would not really be PEALD.
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