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Copper-ALD Seed Layer as an Enabler for Device Scaling

Type:
Conference Proceedings
Info:
ECS Transactions, 41 (2) 33-39 (2011)
Date:
2011-08-01
DOI:
http://dx.doi.org/10.1149/1.3633652

Author Information

Name Institution
Jiajun MaoState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany
Vincent OmarjeeAir Liquide
Andrey KorolevAir Liquide
Christian DussarratAir Liquide

Films

Plasma Cu

Hardware used: TEL Phoenix CVD cluster tool
Abacus
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 30-100C

Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss LEO 1550

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer 660

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone QuadPro S-A8

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope III

Characteristic: Adhesion
Analysis: Custom
Diagnostic: Custom

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

SiO2
Ta
TaN
Ru

Notes

682