Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors

Type:
Journal
Info:
Applied Surface Science 568 (2021) 150939
Date:
2021-08-10
DOI:
https://doi.org/10.1016/j.apsusc.2021.150939

Author Information

Name Institution
Yujin LeeYonsei University
Seunggi SeoYonsei University
Taewook NamYonsei University
Hyunho LeeYonsei University
Hwi YoonYonsei University
Sangkyu SunYonsei University
Il-Kwon OhYonsei University
Sanghun LeeYonsei University
Bonggeun ShongHongik University
Jin Hyung SeoHansol Chemical
Jang Hyeon SeokHansol Chemical
Hyungjun KimYonsei University

Films

Plasma W

Hardware used: CN1 Atomic Premium
HEtCpW(CO)3, ethylcyclopentadienyl tungsten tricarbonyl
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 400C

Plasma W

Hardware used: CN1 Atomic Premium
WCl6, Tungsten Hexachloride
CAS#: 13283-01-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7800F

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7800F

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku ATX-G

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Keithley 4200-SCS

Substrates

SiO2

Notes

1707