Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 052401 (2021)
Date:
2021-06-24
Author Information
| Name | Institution |
|---|---|
| Emanuel Knehr | Karlsruhe Institute of Technology (KIT) |
| Mario Ziegler | Leibniz Institute of Photonic Technology |
| Sven Linzen | Leibniz Institute of Photonic Technology |
| Konstantin Ilin | Karlsruhe Institute of Technology (KIT) |
| Patrick Schanz | Karlsruhe Institute of Technology (KIT) |
| Jonathan Plentz | Leibniz Institute of Photonic Technology |
| Marco Diegel | Leibniz Institute of Photonic Technology |
| Heidemarie Schmidt | Leibniz Institute of Photonic Technology |
| Evgeni Il'ichev | Leibniz Institute of Photonic Technology |
| Michael Siegel | Karlsruhe Institute of Technology (KIT) |
Films
Plasma NbN
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Critical Temperature
Analysis: Custom
Characteristic: Switching Current Density
Analysis: Custom
Substrates
| SiO2 |
| Al2O3 |
Notes
| 1579 |