Dielectric Constant, Permittivity Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Dielectric Constant, Permittivity returned 111 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
3Advances in the fabrication of graphene transistors on flexible substrates
4Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
5Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
6An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
7Annealing behavior of ferroelectric Si-doped HfO2 thin films
8Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
9Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
10Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
11Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
12Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
13Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
14Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
15Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
16Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
17Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
18Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
19Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
20Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
21Densification of Thin Aluminum Oxide Films by Thermal Treatments
22Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
23Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
24Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
25Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
26Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
27Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
28Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
29Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
30Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
31Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
32Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
33Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
34Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
35Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
36Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
37Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
38Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
39Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
40Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
41Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
42Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
43Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
44Fast PEALD ZnO Thin-Film Transistor Circuits
45Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
46Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
47Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
48Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
49Graphene-based MMIC process development and RF passives design
50Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
51Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
52Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
53High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
54High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
55Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
56Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
57Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
58Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
59Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
60Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
61In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
62In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
63Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
64Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
65Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
66Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
67Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
68Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
69Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
70Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
71Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
72Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
73Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
74Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
75Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
76Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
77Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
78Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
79Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
80PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
81Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
82Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
83Plasma enhanced atomic layer deposition of SiNx:H and SiO2
84Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
85Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
86Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
87Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
88Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
89Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
90Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
91Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
92Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
93Propagation Effects in Carbon Nanoelectronics
94Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
95Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
96Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
97Remote Plasma ALD of Platinum and Platinum Oxide Films
98Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
99Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
100Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
101Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
102Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
103Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
104Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
105TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
106Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
107Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
108TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
109Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
110Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
111Very high frequency plasma reactant for atomic layer deposition


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