Dielectric Constant, Permittivity Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Dielectric Constant, Permittivity returned 151 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
2Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
3Remote Plasma ALD of Platinum and Platinum Oxide Films
4High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
5Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor
6Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
7Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
8Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
9Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
10Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
11Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
12Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
13Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
14Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
15Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
16Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
17Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
18Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
19Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
20Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
21Advances in the fabrication of graphene transistors on flexible substrates
22Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
23Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
24Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
25Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells
26Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
27Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
28Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
29Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
30A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
31Graphene-based MMIC process development and RF passives design
32Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
33Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
34Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
35Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
36Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition
37Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
38TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
39Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
40Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
41Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
42Plasma enhanced atomic layer deposition of SiNx:H and SiO2
43Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
44Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
45Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
46Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
47Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
48Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
49TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
50Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
51Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
52Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
53Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
54Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
55Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
56Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
57Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
58Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
59Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
60Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
61Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
62A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
63Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
64Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
65Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
66AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
67Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
68Very high frequency plasma reactant for atomic layer deposition
69Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
70In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
71Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
72Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
73Annealing behavior of ferroelectric Si-doped HfO2 thin films
74Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
75Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
76Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
77Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
78Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
79Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
80Propagation Effects in Carbon Nanoelectronics
81Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
82Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
83Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
84Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
85Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
86Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
87In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
88Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
89The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
90Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
91Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
92Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
93Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
94Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
95Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
96Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
97Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
98Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
99Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
100Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
101Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
102Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
103Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
104Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
105Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
106Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
107Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
108Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
109Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
110Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
111Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
112An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
113Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
114Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
115Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
116Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
117Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
118Fast PEALD ZnO Thin-Film Transistor Circuits
119Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
120Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
121Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
122High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
123Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
124Carbon content control of silicon oxycarbide film with methane containing plasma
125Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
126Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
127Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
128Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
129Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
130Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
131Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
132PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
133Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
134Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
135Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
136Densification of Thin Aluminum Oxide Films by Thermal Treatments
137Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
138Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
139PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
140Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
141Sub-7-nm textured ZrO2 with giant ferroelectricity
142Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
143Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
144Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
145Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
146Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
147Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
148Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
149Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
150Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures