Dielectric Constant, Permittivity Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Dielectric Constant, Permittivity returned 126 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
4Advances in the fabrication of graphene transistors on flexible substrates
5Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
6Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
7AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
8An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
9Annealing behavior of ferroelectric Si-doped HfO2 thin films
10Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
11Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
12Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
13Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
14Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
15Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
16Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
17Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
18Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
19Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
20Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
21Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
22Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
23Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
24Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
25Densification of Thin Aluminum Oxide Films by Thermal Treatments
26Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
27Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
28Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
29Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
30Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
31Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
32Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
33Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
34Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
35Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
36Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
37Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
38Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
39Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
40Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
41Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
42Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
43Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
44Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
45Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
46Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
47Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
48Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
49Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
50Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
51Fast PEALD ZnO Thin-Film Transistor Circuits
52Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
53Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
54Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
55Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
56Graphene-based MMIC process development and RF passives design
57Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
58Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
59Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
60High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
61High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
62Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
63Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
64Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
65Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
66Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
67Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
68In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
69In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
70Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
71Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
72Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
73Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
74Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
75Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
76Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
77Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
78Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
79Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
80Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
81Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
82Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
83Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
84Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
85Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
86Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
87Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
88Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
89PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
90PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
91Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
92Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
93Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
94Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
95Plasma enhanced atomic layer deposition of SiNx:H and SiO2
96Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
97Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
98Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
99Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
100Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
101Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
102Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
103Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
104Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
105Propagation Effects in Carbon Nanoelectronics
106Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
107Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
108Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
109Remote Plasma ALD of Platinum and Platinum Oxide Films
110Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
111Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
112Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
113Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
114Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
115Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
116Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
117Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
118TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
119Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
120The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
121Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
122TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
123Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
124Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
125Very high frequency plasma reactant for atomic layer deposition