Dielectric Constant, Permittivity Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Dielectric Constant, Permittivity returned 151 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
2Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
3Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
4Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
5Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
6PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
7Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
8Very high frequency plasma reactant for atomic layer deposition
9Sub-7-nm textured ZrO2 with giant ferroelectricity
10Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
11Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
12A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
13Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
14Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
15Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
16Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
17Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
18Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
19Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
20Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
21Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
22Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
23Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
24Carbon content control of silicon oxycarbide film with methane containing plasma
25Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
26Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
27Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
28TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
29Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
30Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells
31Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
32Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
33Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
34Remote Plasma ALD of Platinum and Platinum Oxide Films
35Annealing behavior of ferroelectric Si-doped HfO2 thin films
36Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
37Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
38Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
39Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
40Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
41Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
42Fast PEALD ZnO Thin-Film Transistor Circuits
43Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
44Graphene-based MMIC process development and RF passives design
45Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
46Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
47Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
48Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
49Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
50Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
51Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
52Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
53Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
54Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
55Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
56Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
57TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
58Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
59Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
60Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
61Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
62Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
63In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
64Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
65Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
66Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
67Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
68Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
69Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
70Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
71Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
72Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
73Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
74Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
75Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
76Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
77Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
78Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
79Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
80Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
81Densification of Thin Aluminum Oxide Films by Thermal Treatments
82Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
83In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
84Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
85Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
86Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
87Plasma enhanced atomic layer deposition of SiNx:H and SiO2
88Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
89Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
90PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
91Propagation Effects in Carbon Nanoelectronics
92Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
93Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
94The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
95Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
96High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
97An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
98Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
99Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
100Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
101Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
102Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
103Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
104Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
105Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
106High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
107Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
108Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
109Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
110Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
111Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
112Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
113Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor
114Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
115Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
116Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
117Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
118Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
119Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
120Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
121Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
122A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
123Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
124Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
125Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
126Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
127Advances in the fabrication of graphene transistors on flexible substrates
128Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
129Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
130Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
131Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
132Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition
133Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
134Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
135Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
136Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
137Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
138Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
139Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
140Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
141Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
142Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
143Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
144Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
145AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
146Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
147Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
148Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
149Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
150Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor