Dielectric Constant, Permittivity Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Dielectric Constant, Permittivity returned 137 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
4Advances in the fabrication of graphene transistors on flexible substrates
5Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
6Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
7AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
8An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
9Annealing behavior of ferroelectric Si-doped HfO2 thin films
10Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
11Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
12Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
13Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
14Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
15Carbon content control of silicon oxycarbide film with methane containing plasma
16Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
17Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
18Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
19Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
20Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
21Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
22Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
23Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
24Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
25Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
26Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
27Densification of Thin Aluminum Oxide Films by Thermal Treatments
28Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
29Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
30Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
31Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
32Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
33Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
34Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
35Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
36Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
37Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
38Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
39Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
40Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
41Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
42Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
43Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
44Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
45Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
46Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
47Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
48Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
49Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
50Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
51Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
52Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
53Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
54Fast PEALD ZnO Thin-Film Transistor Circuits
55Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
56Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
57Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
58Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
59Graphene-based MMIC process development and RF passives design
60Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
61Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
62Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
63Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
64High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
65High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
66Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
67Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
68Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
69Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
70Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
71Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
72Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
73In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
74In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
75Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
76Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
77Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
78Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
79Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
80Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
81Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
82Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
83Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
84Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
85Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
86Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
87Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
88Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
89Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
90Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
91Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
92Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
93Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
94Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
95Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
96Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
97PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
98PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
99Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
100Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
101Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
102Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
103Plasma enhanced atomic layer deposition of SiNx:H and SiO2
104Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
105Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
106Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
107Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
108Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
109Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
110Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
111Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
112Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
113Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
114Propagation Effects in Carbon Nanoelectronics
115Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
116Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
117Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
118Remote Plasma ALD of Platinum and Platinum Oxide Films
119Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
120Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
121Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
122Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
123Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
124Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
125Sub-7-nm textured ZrO2 with giant ferroelectricity
126Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
127Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
128Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
129TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
130Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
131The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
132Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
133TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
134Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
135Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
136Very high frequency plasma reactant for atomic layer deposition