Capacitance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Capacitance returned 136 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
2Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
3Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
4Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
5Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
6Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
7Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
8Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
9Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
10Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
11High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
12Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
13Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
14Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
15Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
16Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
17Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
18Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
19Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
20Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
21Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
22In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
23Nitride passivation of the interface between high-k dielectrics and SiGe
24AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
25ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
26Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
27Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
28In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
29ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
30Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
31Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
32A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
33ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
34Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
35Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
36Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
37Fast PEALD ZnO Thin-Film Transistor Circuits
38Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
39Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
40Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
41Experimental and theoretical determination of the role of ions in atomic layer annealing
42Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
43Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
44Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
45Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
46Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
47Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
48Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
49Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
50Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
51Capacitance characterization of GaP/n-Si structures grown by PE-ALD
52The effects of plasma treatment on the thermal stability of HfO2 thin films
53ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
54Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
55Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
56AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
57Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
58Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
59Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
60Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
61Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
62Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
63Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
64Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
65The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
66Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
67AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
68In-gap states in titanium dioxide and oxynitride atomic layer deposited films
69Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
70Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
71Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
72Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
73Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
74Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
75Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
76Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
77MANOS performance dependence on ALD Al2O3 oxidation source
78Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
79MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
80In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
81Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
82A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
83Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
84Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
85Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
86The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
87Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
88Influence of PE-ALD of GaP on the Silicon Wafers Quality
89Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
90Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
91Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
92Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
93Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
94AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
95The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
96Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
97Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
98Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
99Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
100Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
101Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
102Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
103PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
104A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
105Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
106Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
107High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
108Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
109Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
110Oxygen migration in TiO2-based higher-k gate stacks
111Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
112Characteristics of HfO2 thin films grown by plasma atomic layer deposition
113Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
114Sub-nanometer heating depth of atomic layer annealing
115Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
116Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
117Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
118Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
119Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
120Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
121Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
122Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
123Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
124Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
125Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
126Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
127Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
128High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
129High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
130Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
131Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
132Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
133Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
134Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
135Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics