Capacitance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Capacitance returned 118 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2	A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
3	A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
4	Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
5	Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
6	ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
7	ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
8	AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
9	AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
10	AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
11	Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
12	Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
13	Capacitance characterization of GaP/n-Si structures grown by PE-ALD
14	Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
15	Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
16	Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
17	Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
18	Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
19	Characteristics of HfO2 thin films grown by plasma atomic layer deposition
20	Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
21	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
22	Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
23	Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
24	Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
25	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
26	Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
27	Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
28	Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
29	Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
30	Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
31	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
32	Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
33	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
34	Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
35	Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
36	Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
37	Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
38	Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
39	Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
40	Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
41	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
42	Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
43	Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
44	Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
45	Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
46	Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
47	Fast PEALD ZnO Thin-Film Transistor Circuits
48	Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
49	Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
50	Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
51	High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
52	High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
53	High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
54	High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
55	Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
56	Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
57	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
58	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
59	Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
60	Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
61	Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
62	In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
63	In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
64	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
65	In-gap states in titanium dioxide and oxynitride atomic layer deposited films
66	Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
67	Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
68	Influence of PE-ALD of GaP on the Silicon Wafers Quality
69	Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
70	Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
71	Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
72	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
73	Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
74	Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
75	Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
76	Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
77	Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
78	Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
79	Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
80	Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
81	Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
82	MANOS performance dependence on ALD Al2O3 oxidation source
83	Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
84	Nitride passivation of the interface between high-k dielectrics and SiGe
85	Oxygen migration in TiO2-based higher-k gate stacks
86	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
87	PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
88	Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
89	Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
90	Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
91	Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
92	Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
93	Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
94	Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
95	Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
96	Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
97	Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
98	Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
99	Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
100	Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
101	Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
102	Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
103	Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
104	Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
105	Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
106	Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
107	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
108	Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
109	The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
110	The effects of plasma treatment on the thermal stability of HfO2 thin films
111	The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
112	The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
113	Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
114	Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
115	Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
116	ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
117	ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

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