2021 Year in Review

The publication database currently has 1628 entries.

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Effect of atomic layer plasma treatment on TALD-ZrO₂ film to improve the corrosion protection of Mg-Ca alloy Deposition and Characterization of RP-ALD SiO₂ Thin Films with Different Oxygen Plasma Powers Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation

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272 Precursors and Plasma Gases

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251 Film and Plasma Characteristics

Compositional Depth Profiling Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Compositional Depth Profiling returned 124 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2	A comparison between HfO₂/Al₂O₃ nano-laminates and ternary Hf_xAl_yO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3	A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
4	Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
5	AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
6	Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
7	Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
8	Antioxidation properties of Ti_0.83Al_0.17N prepared using plasma-enhanced atomic layer deposition
9	Atomic Layer Deposition and Electrical Properties of SrTiO₃ Thin Films Grown Using Sr(C₁₁H₁₉O₂)₂, Ti(Oi-C₃H₇)₄, and H₂O
10	Atomic layer deposition of AlN from AlCl₃ using NH₃ and Ar/NH₃ plasma
11	Atomic layer deposition of aluminum fluoride using Al(CH₃)₃ and SF₆ plasma
12	Atomic layer deposition of B₂O₃/SiO₂ thin films and their application in an efficient diffusion doping process
13	Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
14	Atomic layer deposition of high purity Ga₂O₃ films using liquid pentamethylcyclopentadienyl gallium and combinations of H₂O and O₂ plasma
15	Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)₂ and H₂ and O₂ Plasmas
16	Atomic layer deposition of InN using trimethylindium and ammonia plasma
17	Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
18	Atomic Layer Deposition of TiN/Al₂O₃/TiN Nanolaminates for Capacitor Applications
19	Atomic layer deposition of titanium nitride for quantum circuits
20	Atomic layer deposition of titanium nitride from TDMAT precursor
21	Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N₂ Plasma on Planar and 3D Substrate Topographies
22	Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
23	Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
24	Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
25	Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
26	Characteristics of Atomic-Layer-Deposited HfO₂ Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
27	Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
28	Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
29	Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
30	Characteristics of HfO₂ thin films deposited by plasma-enhanced atomic layer deposition using O₂ plasma and N₂O plasma
31	Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)₂
32	Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
33	Characteristics of ZrO₂ gate dielectric deposited using Zr(t –butoxide) and Zr(NEt₂)₄ precursors by plasma enhanced atomic layer deposition method
34	Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
35	Characterization of HfO_xN_y thin film formation by in-situ plasma enhanced atomic layer deposition using NH₃ and N₂ plasmas
36	Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H₂O plasma and O₂ plasma as oxidant
37	Composition, structure, and electrical characteristics of HfO₂ gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
38	Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
39	Degradation of the surface passivation of plasma-assisted ALD Al₂O₃ under damp-heat exposure
40	Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD
41	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
42	Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon
43	Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film
44	Effect of Oxygen Source on the Various Properties of SnO₂ Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
45	Effect of postdeposition annealing on the electrical properties of beta-Ga₂O₃ thin films grown on p-Si by plasma-enhanced atomic layer deposition
46	Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
47	Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
48	Electrical Properties of Al₂O₃ Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
49	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
50	Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
51	Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
52	Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al₂O₃ dielectric
53	Excellent resistive switching properties of atomic layer-deposited Al₂O₃/HfO₂/Al₂O₃ trilayer structures for non-volatile memory applications
54	Fully CMOS-compatible titanium nitride nanoantennas
55	Gadolinium nitride films deposited using a PEALD based process
56	GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
57	GeSbTe deposition for the PRAM application
58	Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
59	Hydrogen induced passivation of Si interfaces by Al₂O₃ films and SiO₂/Al₂O₃ stacks
60	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
61	Improved electrical performances of plasma-enhanced atomic layer deposited TaC_xN_y films by adopting Ar/H₂ plasma
62	Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al₂O₃ Gate Dielectrics by CF₄ Plasma Treatment
63	In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
64	Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
65	Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
66	Layer-by-layer epitaxial growth of GaN at low temperatures
67	Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
68	Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
69	Low temperature SiO_x thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
70	Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
71	New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se₂ thin film solar cell
72	Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
73	Optical and Electrical Properties of Al_xTi_1-xO Films
74	Oxide Charge Engineering of Atomic Layer Deposited AlO_xN_y/Al₂O₃ Gate Dielectrics: A Path to Enhancement Mode GaN Devices
75	P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
76	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
77	Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
78	Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
79	Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
80	Plasma enhanced atomic layer deposition of gallium sulfide thin films
81	Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH₃
82	Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH₃ Plasma
83	Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
84	Plasma enhanced atomic layer deposition of thin film Li_1+xMn_2-xO₄ for realization of all solid-state 3D lithium-ion microbatteries
85	Plasma nitridation of atomic layer deposition (ALD) Al₂O₃ by NH₃ in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
86	Plasma-assisted atomic layer deposition of Al₂O₃ and parylene C bi-layer encapsulation for chronic implantable electronics
87	Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
88	Plasma-assisted atomic layer deposition of Ta₂O₅ from alkylamide precursor and remote O₂ plasma
89	Plasma-enhanced ALD system for SRF cavity
90	Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
91	Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
92	Plasma-Enhanced Atomic-Layer Deposition of a HfO₂ Gate Dielectric
93	Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
94	Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
95	Pt/Ta₂O₅/HfO_2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
96	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
97	Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
98	Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al₂O₃ films deposited by remote plasma atomic layer deposition
99	Remote Plasma Atomic Layer Deposition of SiN_x Using Cyclosilazane and H₂/N₂ Plasma
100	Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH₃ plasma pretreatment
101	Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
102	Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH₃ Plasma
103	Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
104	Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
105	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
106	Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
107	Surface reactions of aminosilane precursors during N₂ plasma-assisted atomic layer deposition of SiN_x
108	TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO₂ thin films
109	The Effects of Annealing Ambient on the Characteristics of La₂O₃ Films Deposited by RPALD
110	The effects of layering in ferroelectric Si-doped HfO₂ thin films
111	The Formation of an Almost Full Atomic Monolayer via Surface Modification by N₂O-Plasma in Atomic Layer Deposition of ZrO₂ Thin Films
112	The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
113	The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO₂
114	Thermal Stability of ALD HfO₂ Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
115	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
116	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
117	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
118	Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
119	Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
120	Use of B₂O₃ films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
121	Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
122	ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition