Compositional Depth Profiling Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Compositional Depth Profiling returned 85 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
4Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
5AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
6Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
7Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
8Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
9Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
10Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
11Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
12Atomic layer deposition of titanium nitride for quantum circuits
13Atomic layer deposition of titanium nitride from TDMAT precursor
14Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
15Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
16Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
17Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
18Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
19Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
20Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
21Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
22Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
23Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
24Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
25Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
26Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
27Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
28Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
29Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
30Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD
31Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
32Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film
33Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
34Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
35Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
36Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
37Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
38Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
39Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
40Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
41Fully CMOS-compatible titanium nitride nanoantennas
42Gadolinium nitride films deposited using a PEALD based process
43GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
44Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
45Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
46Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
47Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
48Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
49Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
50Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
51Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
52Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
53Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
54Optical and Electrical Properties of AlxTi1-xO Films
55Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
56Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
57Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
58Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
59Plasma enhanced atomic layer deposition of gallium sulfide thin films
60Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
61Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
62Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
63Plasma-enhanced ALD system for SRF cavity
64Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
65Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
66Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
67Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
68Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
69Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
70Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
71Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
72Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
73Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
74Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
75TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
76The effects of layering in ferroelectric Si-doped HfO2 thin films
77The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
78The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
79The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
80Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
81Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
82Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
83Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
84Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
85Using top graphene layer as sacrificial protection during dielectric atomic layer deposition


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