| 1 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 2 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 3 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 4 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
| 5 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 6 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 7 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
| 8 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 9 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 10 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 11 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
| 12 | Atomic layer deposition of titanium nitride for quantum circuits |
| 13 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 14 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 15 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
| 16 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 17 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
| 18 | Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl |
| 19 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 20 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 21 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
| 22 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 23 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 24 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 25 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
| 26 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 27 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
| 28 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
| 29 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
| 30 | Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD |
| 31 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 32 | Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film |
| 33 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 34 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition |
| 35 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 36 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
| 37 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
| 38 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 39 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 40 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 41 | Fully CMOS-compatible titanium nitride nanoantennas |
| 42 | Gadolinium nitride films deposited using a PEALD based process |
| 43 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 44 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 45 | Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks |
| 46 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 47 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
| 48 | Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition |
| 49 | Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study |
| 50 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 51 | Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels |
| 52 | Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma |
| 53 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 54 | Optical and Electrical Properties of AlxTi1-xO Films |
| 55 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 56 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 57 | Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride |
| 58 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 59 | Plasma enhanced atomic layer deposition of gallium sulfide thin films |
| 60 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 61 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 62 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 63 | Plasma-enhanced ALD system for SRF cavity |
| 64 | Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating |
| 65 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
| 66 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
| 67 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 68 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 69 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
| 70 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 71 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 72 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 73 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 74 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 75 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 76 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 77 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 78 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 79 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 80 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 81 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 82 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 83 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 84 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 85 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |