Compositional Depth Profiling Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Compositional Depth Profiling returned 106 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
4Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
5AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
6Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
7Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
8Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
9Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
10Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
11Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
12Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
13Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
14Atomic layer deposition of InN using trimethylindium and ammonia plasma
15Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
16Atomic layer deposition of titanium nitride for quantum circuits
17Atomic layer deposition of titanium nitride from TDMAT precursor
18Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
19Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
20Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
21Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
22Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
23Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
24Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
25Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
26Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
27Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
28Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
29Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
30Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
31Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
32Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
33Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
34Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD
35Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
36Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film
37Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
38Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
39Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
40Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
41Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
42Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
43Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
44Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
45Fully CMOS-compatible titanium nitride nanoantennas
46Gadolinium nitride films deposited using a PEALD based process
47GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
48GeSbTe deposition for the PRAM application
49Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
50Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
51Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
52Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
53Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
54Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
55Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
56Layer-by-layer epitaxial growth of GaN at low temperatures
57Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
58Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
59Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
60Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
61New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
62Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
63Optical and Electrical Properties of AlxTi1-xO Films
64Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
65P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
66Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
67Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
68Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
69Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
70Plasma enhanced atomic layer deposition of gallium sulfide thin films
71Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
72Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
73Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
74Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
75Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
76Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
77Plasma-enhanced ALD system for SRF cavity
78Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
79Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
80Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
81Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
82Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
83Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
84Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
85Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
86Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
87Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
88Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
89Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
90Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
91TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
92The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
93The effects of layering in ferroelectric Si-doped HfO2 thin films
94The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
95The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
96The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
97Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
98Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
99Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
100Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
101Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
102Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
103Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
104ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition


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