Bonding States Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Bonding States returned 130 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
2Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
3Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
4Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
5Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
6Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
7Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
8PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
9Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
10Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
11High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
12Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
13Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
14Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
15Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
16Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
17Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
18Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
19Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
20Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
21Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
22Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
23Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
24Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
25Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
26The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
27Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
28Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
29Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
30New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
31Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
32Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
33Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
34A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
35Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
36Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
37Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
38Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
39Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
40Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
41Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
42Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
43From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications
44IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer
45Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
46Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
47Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
48Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
49Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
50Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
51Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
52Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
53Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
54Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
55Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
56Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy
57Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
58A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
59Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
60Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
61Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
62Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
63P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
64Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
65Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene]
66Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
67Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
68Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
69Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
70Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
71Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
72Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
73Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
74Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
75Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
76Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
77Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
78Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
79Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
80Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition
81Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
82Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
83Plasma enhanced atomic layer deposition of Ga2O3 thin films
84Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
85Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
86Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
87Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
88Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
89Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
90Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
91Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations
92Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
93Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
94Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
95Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
96Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
97Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
98Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
99Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
100Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
101Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
102Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
103Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
104Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
105Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
106Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
107Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
108Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
109In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
110Low-Temperature Phase-Controlled Synthesis of Titanium Di- and Tri-sulfide by Atomic Layer Deposition
111Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
112Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
113Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
114All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
115Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition
116Evaluation of plasma parameters on PEALD deposited TaCN
117Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
118Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
119Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
120Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
121Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
122Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
123Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
124Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
125HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer