Bonding States Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Bonding States returned 115 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
2All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
3Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
4Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
5Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
6Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
7Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
8Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
9Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
10Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
11Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
12Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
13Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
14Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
15Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
16Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
17Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
18Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
19Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
20Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
21Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
22Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
23Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
24Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
25Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
26Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
27Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
28Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
29Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
30Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
31Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
32Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
33Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
34Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
35Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
36Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
37Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
38Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
39Evaluation of plasma parameters on PEALD deposited TaCN
40From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications
41Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations
42Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
43Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
44Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
45Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
46HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
47High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
48Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
49Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
50Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
51Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
52Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
53Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
54In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
55Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
56Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
57Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
58IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer
59Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
60Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
61Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
62Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
63Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
64Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
65Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
66Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
67Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
68Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
69New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
70Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
71Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
72Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
73P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
74PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
75Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
76Plasma enhanced atomic layer deposition of Ga2O3 thin films
77Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
78Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
79Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
80Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
81Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
82Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
83Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
84Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
85Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
86Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
87Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
88Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
89Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
90Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
91Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
92Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
93Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
94Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
95Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
96Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
97Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
98Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
99Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy
100Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
101Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
102The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
103Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
104Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
105Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
106Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
107Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
108Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
109Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
110Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices