Unknown Plasma Enhanced Atomic Layer Deposition Film Publications

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1(Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors
23D-Branched ZnO/CdS Nanowire Arrays for Solar Water Splitting and the Service Safety Research
3A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
4A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
5A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
6A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
7AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
8Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
9Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
10ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects
11ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
12AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
13AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
14AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
15An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
16An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
17An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
18Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
19Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
20Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
21Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
22Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
23Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
24Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation
25Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
26Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
27Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
28Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
29Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
30Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
31Bipolar resistive switching in amorphous titanium oxide thin film
32Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
33Capacitance spectroscopy of gate-defined electronic lattices
34Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
35Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
36Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
37Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
38Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
39Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
40Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
41Charge effects of ultrafine FET with nanodot type floating gate
42Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
43Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50°C
44Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
45CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
46Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
47Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
48Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
49Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
50Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
51Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
52Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
53Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
54Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
55Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
56Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
57Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
58Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
59Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
60Detecting structural variances of Co3O4 catalysts by controlling beam-induced sample alterations in the vacuum of a transmission electron microscope
61Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
62Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
63Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
64DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
65DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
66Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
67Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
68Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface
69Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
70Dynamic threshold voltage influence on Ge pMOSFET hysteresis
71Dynamic tuning of plasmon resonance in the visible using graphene
72Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
73Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
74Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
75Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
76Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
77Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
78Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
79Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors
80Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
81Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
82Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
83Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
84Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
85Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
86Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
87Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
88Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
89Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells
90Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
91Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
92Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
93Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
94Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
95Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
96Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
97Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass
98Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
99Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
100Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
101Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
102Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
103Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
104Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
105Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
106Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film
107Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
108Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
109Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
110Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
111Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
112Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
113Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
114Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
115Epitaxial 1D electron transport layers for high-performance perovskite solar cells
116Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
117Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
118Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
119Experimental verification of electro-refractive phase modulation in graphene
120Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
121Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
122Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays
123Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
124Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
125Fabrication of Si3N4-Based Artificial Basilar Membrane with ZnO Nanopillar Using MEMS Process
126Fast Flexible Plastic Substrate ZnO Circuits
127Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
128Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
129Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
130Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
131Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
132Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
133Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
134Formation of Ni silicide from atomic layer deposited Ni
135Forming-free metal-oxide ReRAM by oxygen ion implantation process
136Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
137Gate Insulator for High Mobility Oxide TFT
138Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
139Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
140Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
141Graphene-based MMIC process development and RF passives design
142Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
143Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
144Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
145Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
146Growth of silica nanowires in vacuum
147Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
148Growth of ZnO nanorods on fluorine-doped tin oxide substrate without catalyst by radio-frequency magnetron sputtering
149Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings
150Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
151High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
152High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
153High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
154High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
155High Performance CoOx/Si Photoanodes: Accessing Structural Disorder for Improved Catalytic Activity via Atomic Layer Deposition
156High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
157High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma
158High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
159Highly efficient and bending durable perovskite solar cells: toward a wearable power source
160Highly reflective polymeric substrates functionalized utilizing atomic layer deposition
161Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
162Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
163Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
164Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
165Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
166Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
167Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
168Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
169Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
170Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination
171Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
172Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
173Improved understanding of recombination at the Si/Al2O3 interface
174Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
175Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
176Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
177In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
178Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
179Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
180Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
181Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
182Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
183Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
184Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
185Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
186Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
187Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
188Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
189Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
190Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
191Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
192Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
193IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer
194Junction-less nanowire based photodetector: Role of nanowire width
195Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
196Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
197Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
198Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
199Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
200Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
201Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
202Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
203Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
204Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
205Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
206Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
207Low-thermal budget flash light annealing for Al2O3 surface passivation
208Mesoporous perovskite solar cells and the role of nanoscale compact layers for remarkable all-round high efficiency under both indoor and outdoor illumination
209Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
210Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
211Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
212Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
213Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
214Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
215Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
216Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
217Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
218New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
219New materials for memristive switching
220Nitride memristors
221Non-destructive acoustic metrology and void detection in 3x50μm TSV
222Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
223On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
224Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
225Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
226Oxide Vertical TFTs for the Application to the Ultra High Resolution Display
227Oxygen migration in TiO2-based higher-k gate stacks
228Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
229Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
230Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
231PEALD of Copper using New Precursors for Next Generation of Interconnections
232PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells
233Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
234Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
235Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
236Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
237Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
238Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
239Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
240Plasma enhanced atomic layer deposition of SiNx:H and SiO2
241Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
242Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
243Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
244Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
245Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
246Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
247Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
248Plasma-enhanced atomic layer deposition for plasmonic TiN
249Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
250Plasma-Enhanced Atomic Layer Deposition Processed Amorphous Indium Zinc Oxide Thin-Film Transistor for Ultra-High Definition Display Application
251Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
252Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
253Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
254Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
255Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
256Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
257Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
258Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
259Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
260Reliability and parasitic issues in GaN-based power HEMTs: a review
261Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
262Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
263Room temperature CO2 detection using interdigitated capacitors with heteropolysiloxane sensing films
264RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
265Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
266Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion
267Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2
268Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
269Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
270Silicon nanowire networks for multi-stage thermoelectric modules
271Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
272SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
273SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance
274Spectroscopy and control of near-surface defects in conductive thin film ZnO
275Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
276Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
277Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
278Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
279Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
280Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
281Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
282Surface Etching of TiO2 Thin Films Using High Density Cl2/Ar Plasma
283Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
284Symmetrical Al2O3-based passivation layers for p- and n-type silicon
285Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
286Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
287Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
288Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
289Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
290Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
291The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
292The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
293Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
294Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition
295Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
296Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
297Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
298TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
299Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
300TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
301Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
302Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
303Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
304Transient characterization of the electroforming process in TiO2 based resistive switching devices
305Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
306Trilayer Tunnel Selectors for Memristor Memory Cells
307Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
308Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
309Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
310Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
311Understanding and Eliminating Hysteresis for Highly Efficient Planar Perovskite Solar Cells
312Understanding and optimizing the floating body retention in FDSOI UTBOX
313Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
314Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
315Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
316Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
317X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect


I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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