Publication Information

Title: Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors

Type: Journal

Info: Nanoscale 2015, Volume 110, Issue , pp 59 - 64

Date: 2015-03-30

DOI: http://dx.doi.org/10.1016/j.sse.2015.01.013

Author Information

Name

Institution

Universitat Stuttgart

Universitat Stuttgart

Universitat Stuttgart

Universitat Stuttgart

Universitat Stuttgart

Universitat Stuttgart

Universitat Stuttgart

Universitat Stuttgart

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

554

Disclaimer

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