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Al2O3 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing Al2O3 films returned 351 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
21D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
346-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
4A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
5A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
6A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
7A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
8A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
9A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
10AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
11Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
12Advances in the fabrication of graphene transistors on flexible substrates
13Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
14Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
15Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
16Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
17Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
18ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
19AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
20AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
21AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
22AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
23Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
24Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
25Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
26An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
27Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
28Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
29Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
30Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
31Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
32Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
33Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
34Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
35Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
36Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
37Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
38AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
39Background-Free Bottom-Up Plasmonic Arrays with Increased Sensitivity, Specificity and Shelf Life for SERS Detection Schemes
40Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
41Band alignment of Al2O3 with (-201) β-Ga2O3
42Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
43Breakdown and Protection of ALD Moisture Barrier Thin Films
44Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
45Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
46Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
47Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
48Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
49Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
50Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
51Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
52Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
53Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
54Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
55Charge effects of ultrafine FET with nanodot type floating gate
56Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
57Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
58Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
59CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
60Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
61Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
62Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
63Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
64Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
65Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
66Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
67Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
68Damage evaluation in graphene underlying atomic layer deposition dielectrics
69Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
70DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
71Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
72Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
73Demonstration of flexible thin film transistors with GaN channels
74Densification of Thin Aluminum Oxide Films by Thermal Treatments
75Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
76Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
77Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
78Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
79DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
80Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
81Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
82Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
83Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
84Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
85Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
86Dynamic threshold voltage influence on Ge pMOSFET hysteresis
87Dynamic tuning of plasmon resonance in the visible using graphene
88Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
89Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
90Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
91Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
92Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
93Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
94Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
95Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
96Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
97Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
98Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
99Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
100Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
101Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
102Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
103Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
104Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
105Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
106Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
107Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
108Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
109Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
110Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
111Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
112Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
113Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
114Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
115Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
116Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
117Energy-enhanced atomic layer deposition for more process and precursor versatility
118Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
119Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
120Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
121Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
122Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
123Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
124Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
125Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
126Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
127Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
128Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
129Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
130Experimental verification of electro-refractive phase modulation in graphene
131Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
132Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
133Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
134Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
135Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
136Fast Flexible Plastic Substrate ZnO Circuits
137Fast PEALD ZnO Thin-Film Transistor Circuits
138Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
139Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
140Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
141Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
142Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
143Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
144Flexible, light trapping substrates for organic photovoltaics
145Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
146Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
147Gate Insulator for High Mobility Oxide TFT
148Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
149Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
150Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
151Graphene-based MMIC process development and RF passives design
152Hafnia and alumina on sulphur passivated germanium
153Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
154High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
155High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
156High-efficiency embedded transmission grating
157High-Reflective Coatings For Ground and Space Based Applications
158High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
159Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
160Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
161Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
162Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
163Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
164Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
165Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
166Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
167Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
168Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
169Improved understanding of recombination at the Si/Al2O3 interface
170Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
171Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
172Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
173Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
174Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
175In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
176In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
177In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
178Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
179Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
180Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
181Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
182Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
183Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
184Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
185Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
186Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
187Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
188Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
189Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
190Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
191Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
192Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
193Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
194Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
195Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
196Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
197Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
198Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
199Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
200Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
201Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
202Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
203Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
204Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
205Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
206Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
207Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
208Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
209Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
210Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
211Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
212Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
213Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
214Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
215Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
216Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
217Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
218Low-Power Double-Gate ZnO TFT Active Rectifier
219Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
220Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
221Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
222Low-thermal budget flash light annealing for Al2O3 surface passivation
223Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
224MANOS performance dependence on ALD Al2O3 oxidation source
225Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
226Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
227Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
228Method of Fabrication for Encapsulated Polarizing Resonant Gratings
229Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
230Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
231Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
232Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
233Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
234Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
235Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
236N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
237Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
238Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
239Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
240Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
241Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
242New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
243Nitride passivation of the interface between high-k dielectrics and SiGe
244Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
245Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
246Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
247On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
248On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
249On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
250Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
251Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
252Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
253Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
254Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
255Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
256Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
257Passivation effects of atomic-layer-deposited aluminum oxide
258Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
259Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
260Patterned deposition by plasma enhanced spatial atomic layer deposition
261Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
262Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
263Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
264Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
265Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
266Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
267Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
268Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
269Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
270Plasma Enhanced Atomic Layer Deposition on Powders
271Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
272Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
273Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
274Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
275Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
276Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
277Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
278Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
279Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
280Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
281Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
282Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
283Propagation Effects in Carbon Nanoelectronics
284Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
285Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
286Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
287Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
288Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
289Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
290Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
291Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
292Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
293Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
294RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
295Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
296Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
297Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
298Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
299Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
300Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
301SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
302Single-Cell Photonic Nanocavity Probes
303Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
304Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
305Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
306Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
307Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
308Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
309Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
310Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
311Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
312Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
313Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
314Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
315Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
316Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
317Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
318Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
319Symmetrical Al2O3-based passivation layers for p- and n-type silicon
320Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
321Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
322Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
323The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
324The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
325The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
326Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
327Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
328Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
329Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
330TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
331Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
332Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
333Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
334Trapped charge densities in Al2O3-based silicon surface passivation layers
335Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
336Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
337Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
338Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
339Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
340Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
341Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
342Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
343Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
344Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
345Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
346Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
347Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
348Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
349Very high frequency plasma reactant for atomic layer deposition
350Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
351Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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