Publication Information

Title: Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 47, September 2005, pp. S292~S295

Date: 2005-02-05

DOI: http://dx.crossref.org/10.3938/jkps.47.292

Author Information

Name

Institution

Pusan National University

Korean Basic Science Institute

Korean Basic Science Institute

Korean Basic Science Institute

Dong-Eui University

Pusan National University

Films

Plasma Ga2O3 using Unknown

Deposition Temperature = 200C

Unknown

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Hitachi S-4200

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Digital Instruments Nanoscope IV

Interface State Density

AES, Auger Electron Spectroscopy

Unknown

Flat Band Voltage

C-F, Capacitance-Frequency Meaurements

HP 4294A

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4294A

Threshold Voltage

C-V, Capacitance-Voltage Measurements

HP 4294A

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4294A

Thickness

XRR, X-Ray Reflectivity

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Substrates

Si(100)

Keywords

Plasma-Enhanced Atomic Layer Deposition

Ga2O3

Gate Dielectric

Capacitance-Voltage

PEALD Film Development

Notes

18

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