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Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 47, September 2005, pp. S292~S295
Date:
2005-02-05
Author Information
| Name | Institution |
|---|---|
| Sang-A Lee | Pusan National University |
| Jae-Yeol Hwang | Korean Basic Science Institute |
| Jong-Pil Kim | Korean Basic Science Institute |
| Chae-Ryong Cho | Korean Basic Science Institute |
| Won-Jae Lee | Dong-Eui University |
| Se-Young Jeong | Pusan National University |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Interface State Density
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Flat Band Voltage
Analysis: C-F, Capacitance-Frequency Meaurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Substrates
| Si(100) |
Notes
| 18 |