Publication Information

Title: Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

Type: Journal

Info: Nanoscale Research Letters (2015) 10:137

Date: 2015-02-04

DOI: http://dx.doi.org/10.1186/s11671-015-0798-2

Author Information

Name

Institution

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Films

Thermal Al2O3 using Unknown

Deposition Temperature Range = 100-200C

75-24-1

7732-18-5

Plasma Al2O3 using Unknown

Deposition Temperature Range = 100-200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interface Trap Density

Non-contact Corona C-V

Semilab PV-2000

Lifetime

Unknown

Semilab PV-2000

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Silicon

Keywords

Passivation

Solar

Notes

Comparison of thermal and plasma enhanced ALD of Al2O3 for passivation of silicon solar cell.

332

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