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Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
Type:
Journal
Info:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & ICs (ISPSD)
Date:
2014-06-15
Author Information
| Name | Institution |
|---|---|
| Shenghou Liu | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
Notes
| PEALD AlN for HEMT interfacial layer between Al2O3 gate dielectric and GaN channel. |
| 274 |