Publication Information

Title: Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Type: Journal

Info: Solid-State Electronics 114 (2015) 90 - 93

Date: 2015-07-27

DOI: http://dx.doi.org/10.1016/j.sse.2015.07.011

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Hynix Semiconductor

Hynix Semiconductor

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Hynix Semiconductor

Films

Plasma TiC using Unknown

Deposition Temperature Range = 250-500C

7550-45-0

75-24-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

AFM, Atomic Force Microscopy

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Work Function

C-V, Capacitance-Voltage Measurements

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Resistivity, Sheet Resistance

Unknown

Unknown

Substrates

SiO2

Keywords

Notes

386

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com