Hydrogen, H2, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 245 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1AgAg films grown by remote plasma enhanced atomic layer deposition on different substrates
2AgAtmospheric pressure plasma enhanced spatial ALD of silver
3AgAtomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4AgConformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5AgLarge-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6AgPlasma-Enhanced Atomic Layer Deposition of Silver Thin Films
7AgRadical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
8AgRadical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
9AgSelf Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
10AgSpoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
11AlAtomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
12AlRadical Enhanced Atomic Layer Deposition of Metals and Oxides
13AlStudy on the characteristics of aluminum thin films prepared by atomic layer deposition
14AlTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
15Al2O3Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
16Al2O3Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
17AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
18AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
19AlxGa1-xNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
20AlInNAtomic layer epitaxy for quantum well nitride-based devices
21AlNALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
22AlNAlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
23AlNAtomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
24AlNAtomic layer epitaxy for quantum well nitride-based devices
25AlNBipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
26AlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
27AlNCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
28AlNFabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
29AlNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
30AlNGaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
31AlNGrowing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
32AlNGrowing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
33AlNGrowth of aluminum nitride films by plasma-enhanced atomic layer deposition
34AlNHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
35AlNHigh performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
36AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
37AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
38AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
39AlNLow-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
40AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
41AlNNew materials for memristive switching
42AlNNitride memristors
43AlNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
44AlNPEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
45AlNPlasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
46AlNPlasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
47AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
48AlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
49AlNPolarization charge properties of low-temperature atomic layer deposition of AlN on GaN
50AlNStructural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
51AlNStructural and optical characterization of low-temperature ALD crystalline AlN
52AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
53AlNXPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
54BGaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
55BNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
56BNLow-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
57BNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
58CoCharacteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
59CoCharacteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
60CoCharacteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
61CoComparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
62CoHot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
63CoNitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
64CoPlasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
65CoSpontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
66CoCHigh-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
67CrRadical Enhanced Atomic Layer Deposition of Metals and Oxides
68CuAtomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
69CuCopper-ALD Seed Layer as an Enabler for Device Scaling
70CuDeposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
71CuHydrogen plasma-enhanced atomic layer deposition of copper thin films
72CuIntegration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
73CuLow temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
74CuLow-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
75CuMetallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
76CuPEALD of Copper using New Precursors for Next Generation of Interconnections
77CuRadical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
78CuUltra-Low Temperature Deposition of Copper Seed Layers by PEALD
79FeConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
80GaNA route to low temperature growth of single crystal GaN on sapphire
81GaNComparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
82GaNDemonstration of flexible thin film transistors with GaN channels
83GaNEffect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
84GaNElectron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
85GaNElectronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
86GaNFabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
87GaNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
88GaNInvestigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
89GaNLow temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
90GaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
91GaNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
92GaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
93GaNMetal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
94GaNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
95GaNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
96GaNStructure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
97GaNSubstrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
98GaNSubstrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
99GaNUltralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
100GaNUniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
101GdNGadolinium nitride films deposited using a PEALD based process
102GeInfluence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
103GeSbTePhase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
104GrapheneLow-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
105HfRadical Enhanced Atomic Layer Deposition of Metals and Oxides
106HfNxEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
107HfNxHfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
108HfNxPlasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
109HfO2High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
110HfO2Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
111HfO2The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
112HfONHfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
113HfTiNEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
114InGaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
115InNAtomic layer epitaxy for quantum well nitride-based devices
116InNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
117MnAtomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
118MnOxDeposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
119MoRadical Enhanced Atomic Layer Deposition of Metals and Oxides
120MoCNPlasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
121MoNHighly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
122NbRadical Enhanced Atomic Layer Deposition of Metals and Oxides
123Nb2O5Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
124NbNAnalysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
125NbNAtomic Layer Deposition of Niobium Nitride from Different Precursors
126NbNPlasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
127NbNPlasma-enhanced atomic layer deposition of superconducting niobium nitride
128NbNSuperconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
129NiConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
130NiInterface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
131NiPlasma-Enhanced Atomic Layer Deposition of Ni
132NiRadical Enhanced Atomic Layer Deposition of Metals and Oxides
133NiSpontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
134PdAtomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
135PdIn situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
136PdPlasma-enhanced atomic layer deposition of palladium on a polymer substrate
137PdSub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
138PtAtomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
139PtEnhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
140PtRemote Plasma ALD of Platinum and Platinum Oxide Films
141PtRemote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
142PtRoom-Temperature Atomic Layer Deposition of Platinum
143PtSurface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
144RuIn Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
145RuMobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
146RuNear room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
147RuPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
148RuRadical Enhanced Atomic Layer Deposition of Metals and Oxides
149Ru-WCNDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
150RuCoEmerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
151RuNxIn Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
152RuTiNImproved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
153RuTiNPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
154Sb2Te3Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
155SiAlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
156SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
157SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
158SiNxPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
159SiNxRole of Surface Termination in Atomic Layer Deposition of Silicon Nitride
160SiNxSilicon Nitride and Silicon Oxide Thin Films by Plasma ALD
161SiNxSingle-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
162TaPlasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
163TaRadical Enhanced Atomic Layer Deposition of Metals and Oxides
164Ta2O5In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
165TaCxChemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
166TaCNChemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
167TaCNEvaluation of plasma parameters on PEALD deposited TaCN
168TaCNFormation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
169TaCNInterface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
170TaCNPlasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
171TaCNProperties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
172TaCNThe Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
173TaNxChemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
174TaNxEffect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
175TaNxNucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
176TaNxOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
177TaNxPlasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
178TaNxPlasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
179TaNxPreparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
180TaNxReaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
181TaNxThe Properties of Cu Thin Films on Ru Depending on the ALD Temperature
182TaNxTrilayer Tunnel Selectors for Memristor Memory Cells
183TiGrowth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
184TiPlasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
185TiAlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
186TiAlNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
187TiCPlasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
188TiCProperties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
189TiCTemperature control for the gate workfunction engineering of TiC film by atomic layer deposition
190TiCNPlasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
191TiCNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
192TiNApproximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
193TiNAtomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
194TiNAtomic layer deposition of TiN for the fabrication of nanomechanical resonators
195TiNCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
196TiNCharacteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
197TiNComparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
198TiNConformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
199TiNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
200TiNDeposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
201TiNEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
202TiNElectrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
203TiNFabrication and deformation of three-dimensional hollow ceramic nanostructures
204TiNHot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
205TiNInvestigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
206TiNLow sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
207TiNLow-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
208TiNLow-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
209TiNMicrowave properties of superconducting atomic-layer deposited TiN films
210TiNNew materials for memristive switching
211TiNNitride memristors
212TiNOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
213TiNPlasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
214TiNPlasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
215TiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
216TiNPlasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
217TiNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
218TiNRemote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
219TiNStrongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
220TiNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
221TiNTiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
222TiNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
223TiO2Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
224TiONTitanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
225TiSiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
226WComparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
227WHot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
228WCA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
229WCAtomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
230WCCharacteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
231WCWork function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
232WCNDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
233WCNWork function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
234WNA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
235WNPlasma-enhanced atomic layer deposition of tungsten nitride
236WSiNHighly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
237ZnOEffect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
238ZnONew approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
239ZnONLocal Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
240ZnONUltraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
241ZrNAxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
242ZrNInfluence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
243ZrNLow temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
244ZrNProbing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
245ZrO2Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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