Hydrogen, H2, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 230 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1AgAg films grown by remote plasma enhanced atomic layer deposition on different substrates
2AgAtmospheric pressure plasma enhanced spatial ALD of silver
3AgAtomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4AgConformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5AgLarge-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6AgPlasma-Enhanced Atomic Layer Deposition of Silver Thin Films
7AgRadical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
8AgRadical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
9AgSelf Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
10AgSpoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
11AlAtomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
12AlRadical Enhanced Atomic Layer Deposition of Metals and Oxides
13AlStudy on the characteristics of aluminum thin films prepared by atomic layer deposition
14AlTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
15Al2O3Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
16Al2O3Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
17AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
18AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
19AlxGa1-xNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
20AlInNAtomic layer epitaxy for quantum well nitride-based devices
21AlNALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
22AlNAlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
23AlNAtomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
24AlNAtomic layer epitaxy for quantum well nitride-based devices
25AlNBipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
26AlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
27AlNCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
28AlNFabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
29AlNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
30AlNGaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
31AlNGrowing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
32AlNGrowing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
33AlNGrowth of aluminum nitride films by plasma-enhanced atomic layer deposition
34AlNHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
35AlNHigh performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
36AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
37AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
38AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
39AlNLow-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
40AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
41AlNNew materials for memristive switching
42AlNNitride memristors
43AlNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
44AlNPlasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
45AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
46AlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
47AlNPolarization charge properties of low-temperature atomic layer deposition of AlN on GaN
48AlNStructural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
49AlNStructural and optical characterization of low-temperature ALD crystalline AlN
50AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
51AlNXPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
52BGaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
53BNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
54BNLow-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
55BNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
56CoCharacteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
57CoHot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
58CoPlasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
59CrRadical Enhanced Atomic Layer Deposition of Metals and Oxides
60CuAtomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
61CuCopper-ALD Seed Layer as an Enabler for Device Scaling
62CuDeposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
63CuHydrogen plasma-enhanced atomic layer deposition of copper thin films
64CuIntegration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
65CuLow temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
66CuLow-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
67CuMetallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
68CuPEALD of Copper using New Precursors for Next Generation of Interconnections
69CuRadical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
70CuUltra-Low Temperature Deposition of Copper Seed Layers by PEALD
71FeConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
72GaNA route to low temperature growth of single crystal GaN on sapphire
73GaNComparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
74GaNDemonstration of flexible thin film transistors with GaN channels
75GaNEffect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
76GaNElectron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
77GaNElectronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
78GaNFabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
79GaNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
80GaNInvestigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
81GaNLow temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
82GaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
83GaNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
84GaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
85GaNMetal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
86GaNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
87GaNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
88GaNStructure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
89GaNSubstrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
90GaNSubstrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
91GaNUltralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
92GaNUniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
93GdNGadolinium nitride films deposited using a PEALD based process
94GeInfluence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
95GeSbTePhase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
96GrapheneLow-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
97HfRadical Enhanced Atomic Layer Deposition of Metals and Oxides
98HfNxHfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
99HfNxPlasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
100HfO2High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
101HfO2Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
102HfO2The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
103HfONHfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
104InGaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
105InNAtomic layer epitaxy for quantum well nitride-based devices
106InNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
107MnAtomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
108MnOxDeposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
109MoRadical Enhanced Atomic Layer Deposition of Metals and Oxides
110MoCNPlasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
111MoNHighly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
112NbRadical Enhanced Atomic Layer Deposition of Metals and Oxides
113Nb2O5Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
114NbNAnalysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
115NbNPlasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
116NbNPlasma-enhanced atomic layer deposition of superconducting niobium nitride
117NbNSuperconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
118NiConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
119NiInterface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
120NiPlasma-Enhanced Atomic Layer Deposition of Ni
121NiRadical Enhanced Atomic Layer Deposition of Metals and Oxides
122PdAtomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
123PdIn situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
124PdPlasma-enhanced atomic layer deposition of palladium on a polymer substrate
125PdSub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
126PtAtomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
127PtEnhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
128PtRemote Plasma ALD of Platinum and Platinum Oxide Films
129PtRemote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
130PtRoom-Temperature Atomic Layer Deposition of Platinum
131PtSurface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
132RuIn Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
133RuMobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
134RuNear room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
135RuPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
136RuRadical Enhanced Atomic Layer Deposition of Metals and Oxides
137Ru-WCNDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
138RuCoEmerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
139RuNxIn Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
140RuTiNImproved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
141RuTiNPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
142Sb2Te3Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
143SiAlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
144SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
145SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
146SiNxPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
147SiNxRole of Surface Termination in Atomic Layer Deposition of Silicon Nitride
148SiNxSilicon Nitride and Silicon Oxide Thin Films by Plasma ALD
149SiNxSingle-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
150TaPlasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
151TaRadical Enhanced Atomic Layer Deposition of Metals and Oxides
152TaCxChemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
153TaCNChemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
154TaCNEvaluation of plasma parameters on PEALD deposited TaCN
155TaCNFormation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
156TaCNInterface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
157TaCNPlasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
158TaCNProperties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
159TaCNThe Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
160TaNxChemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
161TaNxEffect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
162TaNxNucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
163TaNxOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
164TaNxPlasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
165TaNxPlasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
166TaNxPreparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
167TaNxReaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
168TaNxThe Properties of Cu Thin Films on Ru Depending on the ALD Temperature
169TaNxTrilayer Tunnel Selectors for Memristor Memory Cells
170TiGrowth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
171TiPlasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
172TiAlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
173TiAlNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
174TiCPlasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
175TiCProperties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
176TiCTemperature control for the gate workfunction engineering of TiC film by atomic layer deposition
177TiCNPlasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
178TiCNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
179TiNApproximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
180TiNAtomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
181TiNAtomic layer deposition of TiN for the fabrication of nanomechanical resonators
182TiNCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
183TiNCharacteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
184TiNComparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
185TiNConformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
186TiNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
187TiNDeposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
188TiNElectrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
189TiNFabrication and deformation of three-dimensional hollow ceramic nanostructures
190TiNHot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
191TiNInvestigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
192TiNLow sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
193TiNLow-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
194TiNLow-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
195TiNMicrowave properties of superconducting atomic-layer deposited TiN films
196TiNNew materials for memristive switching
197TiNNitride memristors
198TiNOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
199TiNPlasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
200TiNPlasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
201TiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
202TiNPlasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
203TiNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
204TiNRemote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
205TiNStrongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
206TiNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
207TiNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
208TiO2Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
209TiONTitanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
210TiSiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
211WComparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
212WHot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
213WCA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
214WCAtomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
215WCCharacteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
216WCWork function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
217WCNDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
218WCNWork function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
219WNA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
220WNPlasma-enhanced atomic layer deposition of tungsten nitride
221WSiNHighly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
222ZnOEffect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
223ZnONew approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
224ZnONLocal Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
225ZnONUltraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
226ZrNAxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
227ZrNInfluence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
228ZrNLow temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
229ZrNProbing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
230ZrO2Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com