Hydrogen, H2, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 255 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1AgAg films grown by remote plasma enhanced atomic layer deposition on different substrates
2AgAtmospheric pressure plasma enhanced spatial ALD of silver
3AgAtomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4AgConformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5AgLarge-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6AgPlasma-Enhanced Atomic Layer Deposition of Silver Thin Films
7AgRadical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
8AgRadical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
9AgSelf Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
10AgSpoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
11AlAtomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
12AlRadical Enhanced Atomic Layer Deposition of Metals and Oxides
13AlStudy on the characteristics of aluminum thin films prepared by atomic layer deposition
14AlTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
15Al2O3Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
16Al2O3Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
17AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
18AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
19AlxGa1-xNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
20AlInNAtomic layer epitaxy for quantum well nitride-based devices
21AlNALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
22AlNAlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
23AlNAtomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
24AlNAtomic layer epitaxy for quantum well nitride-based devices
25AlNBipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
26AlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
27AlNCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
28AlNFabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
29AlNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
30AlNGaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
31AlNGrowing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
32AlNGrowing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
33AlNGrowth of aluminum nitride films by plasma-enhanced atomic layer deposition
34AlNHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
35AlNHigh performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
36AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
37AlNInfluence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
38AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
39AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
40AlNLow-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
41AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
42AlNNew materials for memristive switching
43AlNNitride memristors
44AlNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
45AlNPEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
46AlNPlasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
47AlNPlasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
48AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
49AlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
50AlNPolarization charge properties of low-temperature atomic layer deposition of AlN on GaN
51AlNStructural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
52AlNStructural and optical characterization of low-temperature ALD crystalline AlN
53AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
54AlNXPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
55AlSPlasma enhanced atomic layer deposition of aluminum sulfide thin films
56BGaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
57BNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
58BNLow-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
59BNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
60CoCharacteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
61CoCharacteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
62CoCharacteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
63CoComparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
64CoHot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
65CoNitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
66CoPlasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
67CoSpontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
68CoCHigh-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
69CrRadical Enhanced Atomic Layer Deposition of Metals and Oxides
70CuAtomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
71CuCopper-ALD Seed Layer as an Enabler for Device Scaling
72CuDeposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
73CuHydrogen plasma-enhanced atomic layer deposition of copper thin films
74CuIntegration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
75CuLow temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
76CuLow-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
77CuMetallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
78CuPEALD of Copper using New Precursors for Next Generation of Interconnections
79CuRadical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
80CuUltra-Low Temperature Deposition of Copper Seed Layers by PEALD
81FeConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
82GaNA route to low temperature growth of single crystal GaN on sapphire
83GaNComparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
84GaNDemonstration of flexible thin film transistors with GaN channels
85GaNEffect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
86GaNElectron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
87GaNElectronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
88GaNFabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
89GaNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
90GaNInfluence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
91GaNInvestigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
92GaNLow temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
93GaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
94GaNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
95GaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
96GaNMetal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
97GaNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
98GaNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
99GaNStructure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
100GaNSubstrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
101GaNSubstrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
102GaNUltralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
103GaNUniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
104GdNGadolinium nitride films deposited using a PEALD based process
105GeInfluence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
106GeSbTePhase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
107GrapheneLow-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
108H:ZnOAtomic layer deposition of high-mobility hydrogen-doped zinc oxide
109HfRadical Enhanced Atomic Layer Deposition of Metals and Oxides
110HfNxEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
111HfNxHfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
112HfNxPlasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
113HfO2High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
114HfO2Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
115HfO2The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
116HfONHfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
117HfTiNEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
118InGaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
119InNAtomic layer epitaxy for quantum well nitride-based devices
120InNInfluence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
121InNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
122MnAtomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
123MnOxDeposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
124MoRadical Enhanced Atomic Layer Deposition of Metals and Oxides
125MoCNPlasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
126MoNHighly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
127NbRadical Enhanced Atomic Layer Deposition of Metals and Oxides
128Nb2O5Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
129NbNAnalysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
130NbNAtomic Layer Deposition of Niobium Nitride from Different Precursors
131NbNPlasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
132NbNPlasma-enhanced atomic layer deposition of superconducting niobium nitride
133NbNSuperconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
134NbNSuperconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
135NbNSuperconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
136NbTiNSuperconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
137NiConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
138NiGrowth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
139NiInterface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
140NiPlasma-Enhanced Atomic Layer Deposition of Ni
141NiRadical Enhanced Atomic Layer Deposition of Metals and Oxides
142NiSpontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
143PdAtomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
144PdIn situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
145PdPlasma-enhanced atomic layer deposition of palladium on a polymer substrate
146PdSub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
147PtAtomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
148PtEnhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
149PtRemote Plasma ALD of Platinum and Platinum Oxide Films
150PtRemote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
151PtRoom-Temperature Atomic Layer Deposition of Platinum
152PtSurface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
153RuIn Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
154RuMobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
155RuNear room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
156RuPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
157RuRadical Enhanced Atomic Layer Deposition of Metals and Oxides
158Ru-WCNDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
159RuCoEmerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
160RuNxIn Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
161RuTiNImproved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
162RuTiNPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
163Sb2Te3Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
164SiAlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
165SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
166SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
167SiNxPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
168SiNxRole of Surface Termination in Atomic Layer Deposition of Silicon Nitride
169SiNxSilicon Nitride and Silicon Oxide Thin Films by Plasma ALD
170SiNxSingle-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
171TaPlasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
172TaRadical Enhanced Atomic Layer Deposition of Metals and Oxides
173Ta2O5In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
174TaCxChemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
175TaCNChemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
176TaCNEvaluation of plasma parameters on PEALD deposited TaCN
177TaCNFormation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
178TaCNInterface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
179TaCNPlasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
180TaCNProperties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
181TaCNThe Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
182TaNxChemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
183TaNxEffect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
184TaNxNucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
185TaNxOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
186TaNxPlasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
187TaNxPlasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
188TaNxPreparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
189TaNxReaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
190TaNxThe Properties of Cu Thin Films on Ru Depending on the ALD Temperature
191TaNxTrilayer Tunnel Selectors for Memristor Memory Cells
192TiGrowth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
193TiPlasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
194TiAlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
195TiAlNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
196TiCPlasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
197TiCProperties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
198TiCTemperature control for the gate workfunction engineering of TiC film by atomic layer deposition
199TiCNPlasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
200TiCNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
201TiNApproximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
202TiNAtomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
203TiNAtomic layer deposition of TiN for the fabrication of nanomechanical resonators
204TiNCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
205TiNCharacteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
206TiNComparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
207TiNConformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
208TiNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
209TiNDeposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
210TiNEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
211TiNElectrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
212TiNFabrication and deformation of three-dimensional hollow ceramic nanostructures
213TiNHot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
214TiNInvestigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
215TiNLow sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
216TiNLow-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
217TiNLow-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
218TiNMicrowave properties of superconducting atomic-layer deposited TiN films
219TiNNew materials for memristive switching
220TiNNitride memristors
221TiNOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
222TiNPlasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
223TiNPlasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
224TiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
225TiNPlasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
226TiNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
227TiNRemote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
228TiNStrongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
229TiNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
230TiNTiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
231TiNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
232TiO2Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
233TiONTitanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
234TiSiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
235VOxTunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
236WComparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
237WHot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
238WCA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
239WCAtomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
240WCCharacteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
241WCWork function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
242WCNDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
243WCNWork function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
244WNA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
245WNPlasma-enhanced atomic layer deposition of tungsten nitride
246WSiNHighly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
247ZnOEffect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
248ZnONew approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
249ZnONLocal Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
250ZnONUltraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
251ZrNAxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
252ZrNInfluence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
253ZrNLow temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
254ZrNProbing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
255ZrO2Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications

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