Publication Information

Title: Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2012, 4 (7), pp 3471-3475

Date: 2012-06-11

DOI: http://dx.doi.org/10.1021/am300551y

Author Information

Name

Institution

National Taiwan University

Protrustech Corporation Limited

National Taiwan University

National Taiwan University

Films

Deposition Temperature = 180C

557-20-0

7732-18-5

7664-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Bonding States

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Bonding States

X-ray Absorption Spectroscopy

Synchrotron

Carrier Concentration

Hall effect/van der Pauw method

Ecopia HMS-3000

Mobility

Hall effect/van der Pauw method

Ecopia HMS-3000

Conductivity Type

Hall effect/van der Pauw method

Ecopia HMS-3000

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Photoluminescence

PL, PhotoLuminescence

Custom

Substrates

Sapphire

Keywords

Notes

654

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