Publication Information

Title: A controlled growth of WNx and WCx thin films prepared by atomic layer deposition

Type: Journal

Info: Materials Letters, Volume 168, Pages 218 - 222

Date: 2016-01-16

DOI: http://dx.doi.org/10.1016/j.matlet.2016.01.071

Author Information

Name

Institution

Yeungnam University

Yeungnam University

Yeungnam University

UP Chemical

Brown University

Incheon National University

Korean Basic Science Institute

Yeungnam University

Films

Plasma WN using Custom

Deposition Temperature = 250C

12131-66-7

7727-37-9

1333-74-0

Plasma WC using Custom

Deposition Temperature = 250C

12131-66-7

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

FEI Technai F20

Resistivity, Sheet Resistance

Unknown

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

Unknown

Unknown

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific ESCA LAB 250 XPS Spectrometer

Chemical Composition, Impurities

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

CAMECA IMS 6F

Microstructure

TEM, Transmission Electron Microscope

FEI Technai F20

Substrates

SiO2

Keywords

Notes

620

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