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Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Results in Physics 12 (2019) 804-809
Date:
2018-12-06
Author Information
| Name | Institution |
|---|---|
| Yunlai An | University of Science and Technology |
| Yingfeng He | University of Science and Technology |
| Huiyun Wei | University of Science and Technology |
| Sanjie Liu | University of Science and Technology |
| Meiling Li | University of Science and Technology |
| Yimeng Song | University of Science and Technology |
| Peng Qiu | University of Science and Technology |
| Abdul Rehman | University of Science and Technology |
| Xinhe Zheng | University of Science and Technology |
| Mingzeng Peng | University of Science and Technology |
Films
Plasma InN
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Uniformity
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Substrates
| Si(100) |
Notes
| 1298 |