Nitrogen, N2, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 211 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1AgAtmospheric pressure plasma enhanced spatial ALD of silver
2Al2O3AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3Al2O3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Al2O3Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Al2O3Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Al2O3Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7AlxGa1-xNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
8AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
9AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
10AlxGa1-xNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
11AlInNAtomic layer epitaxy for quantum well nitride-based devices
12AlInNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13AlInNPerspectives on future directions in III-N semiconductor research
14AlNALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
15AlNAlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
16AlNAlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
17AlNAtomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
18AlNAtomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
19AlNAtomic layer epitaxy for quantum well nitride-based devices
20AlNBipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
21AlNCompatibility of AlN/SiNx Passivation Technique with High-Temperature Process
22AlNCompatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
23AlNCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
24AlNEngineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
25AlNEpitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
26AlNFabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
27AlNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
28AlNGaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
29AlNGrowing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
30AlNGrowing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
31AlNGrowth of aluminum nitride films by plasma-enhanced atomic layer deposition
32AlNHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
33AlNHigh performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
34AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
35AlNImpact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
36AlNImproved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
37AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
38AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
39AlNInvestigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
40AlNLow-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
41AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
42AlNLow-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
43AlNNew materials for memristive switching
44AlNNitride memristors
45AlNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
46AlNPEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
47AlNPerspectives on future directions in III-N semiconductor research
48AlNPlasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
49AlNPlasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
50AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
51AlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
52AlNPolarization charge properties of low-temperature atomic layer deposition of AlN on GaN
53AlNPractical Challenges of Processing III-Nitride/Graphene/SiC Devices
54AlNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
55AlNSelective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
56AlNStructural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
57AlNStructural and optical characterization of low-temperature ALD crystalline AlN
58AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
59AlNTris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
60AlNXPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
61AlONImproved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
62AlONImproved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
63AlONOxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
64AlONStabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
65AlONThin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
66AlSixOyCharacteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
67BGaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
68BInNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
69BNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
70BNLarge-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
71BNLow-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
72BNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
73CoCharacteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
74CoComparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
75CoHot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
76Did Not WorkDeposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
77FeConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
78GaNA route to low temperature growth of single crystal GaN on sapphire
79GaNComparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
80GaNDemonstration of flexible thin film transistors with GaN channels
81GaNEffect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
82GaNElectronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
83GaNFabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
84GaNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
85GaNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
86GaNInvestigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
87GaNLow temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
88GaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
89GaNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
90GaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
91GaNMetal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
92GaNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
93GaNPerspectives on future directions in III-N semiconductor research
94GaNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
95GaNStructure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
96GaNSubstrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
97GaNSubstrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
98GdNGadolinium nitride films deposited using a PEALD based process
99HfNxCharacteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
100HfNxEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
101HfNxPlasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
102HfO2An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
103HfO2Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
104HfO2Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
105HfONCharacterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
106HfTiNEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
107InGaNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
108InGaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
109InNAtomic layer epitaxy for quantum well nitride-based devices
110InNEpitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
111InNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
112InNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
113InNLow-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
114InNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
115InNPerspectives on future directions in III-N semiconductor research
116LiPONAtomic Layer Deposition of the Solid Electrolyte LiPON
117LiPONSolid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
118LiPONStabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
119MoCNPlasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
120NbNAtomic Layer Deposition of Niobium Nitride from Different Precursors
121NbNPlasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
122NbNPlasma-enhanced atomic layer deposition of superconducting niobium nitride
123NiConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
124PdPlasma-enhanced atomic layer deposition of palladium on a polymer substrate
125RuPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
126RuScalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
127RuNxIn Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
128RuTiNImproved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
129RuTiNPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
130SiAlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
131SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
132SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
133SiNxAtomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
134SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
135SiNxCorrelation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
136SiNxLow-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
137SiNxPlasma enhanced atomic layer deposition of silicon nitride using neopentasilane
138SiNxPlasma enhanced atomic layer deposition of SiNx:H and SiO2
139SiNxPlasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
140SiNxPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
141SiNxReactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
142SiNxRedeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
143SiNxRole of Surface Termination in Atomic Layer Deposition of Silicon Nitride
144SiNxSilicon Nitride and Silicon Oxide Thin Films by Plasma ALD
145SiNxSingle-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
146SiNxSteady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
147SiNxThermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
148SiO2Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
149SiONPlasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
150TaNxEffect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
151TaNxOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
152TaNxReaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
153TaNxTrilayer Tunnel Selectors for Memristor Memory Cells
154TiAlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
155TiAlNElectrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
156TiNALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
157TiNALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
158TiNAnnealing behavior of ferroelectric Si-doped HfO2 thin films
159TiNApproximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
160TiNAtomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
161TiNAtomic layer deposition of TiN for the fabrication of nanomechanical resonators
162TiNAtomic layer deposition of titanium nitride from TDMAT precursor
163TiNCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
164TiNComparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
165TiNConformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
166TiNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
167TiNDeposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
168TiNEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
169TiNElectrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
170TiNFabrication and deformation of three-dimensional hollow ceramic nanostructures
171TiNFully CMOS-compatible titanium nitride nanoantennas
172TiNHigh aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
173TiNInvestigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
174TiNLow sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
175TiNMicrowave properties of superconducting atomic-layer deposited TiN films
176TiNNew materials for memristive switching
177TiNNitride memristors
178TiNOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
179TiNPlasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
180TiNPlasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
181TiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
182TiNPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
183TiNPlasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
184TiNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
185TiNReliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
186TiNRemote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
187TiNSilicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
188TiNSilicon nanowire networks for multi-stage thermoelectric modules
189TiNStrongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
190TiNSub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
191TiNTiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
192TiO2In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
193TiONAnalysis of nitrogen species in titanium oxynitride ALD films
194TiONAnalysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
195TiONNitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
196TiONPlasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
197TiONTitanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
198TiSiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
199WCA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
200WCAtomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
201WCCharacteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
202WCNPulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
203WNA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
204WNPlasma-enhanced atomic layer deposition of tungsten nitride
205ZrNAxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
206ZrNBarrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
207ZrNInfluence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
208ZrNLow temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
209ZrNProbing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
210ZrNTuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
211ZrONImproved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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