Nitrogen, N2, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 199 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1AgAtmospheric pressure plasma enhanced spatial ALD of silver
2Al2O3AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3Al2O3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Al2O3Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Al2O3Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Al2O3Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7AlxGa1-xNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
8AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
9AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
10AlxGa1-xNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
11AlInNAtomic layer epitaxy for quantum well nitride-based devices
12AlInNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13AlInNPerspectives on future directions in III-N semiconductor research
14AlNALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
15AlNAlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
16AlNAtomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
17AlNAtomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
18AlNAtomic layer epitaxy for quantum well nitride-based devices
19AlNBipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
20AlNCompatibility of AlN/SiNx Passivation Technique with High-Temperature Process
21AlNCompatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
22AlNCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
23AlNEngineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
24AlNEpitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
25AlNFabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
26AlNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
27AlNGaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
28AlNGrowing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
29AlNGrowing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
30AlNGrowth of aluminum nitride films by plasma-enhanced atomic layer deposition
31AlNHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
32AlNHigh performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
33AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
34AlNImpact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
35AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
36AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
37AlNInvestigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
38AlNLow-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
39AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
40AlNLow-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
41AlNNew materials for memristive switching
42AlNNitride memristors
43AlNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
44AlNPerspectives on future directions in III-N semiconductor research
45AlNPlasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
46AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
47AlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
48AlNPolarization charge properties of low-temperature atomic layer deposition of AlN on GaN
49AlNPractical Challenges of Processing III-Nitride/Graphene/SiC Devices
50AlNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
51AlNSelective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
52AlNStructural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
53AlNStructural and optical characterization of low-temperature ALD crystalline AlN
54AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
55AlNTris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
56AlNXPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
57AlONImproved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
58AlONImproved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
59AlONOxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
60AlONStabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
61AlONThin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
62AlSixOyCharacteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
63BGaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
64BInNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
65BNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
66BNLarge-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
67BNLow-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
68BNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
69CoHot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
70Did Not WorkDeposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
71FeConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
72GaNA route to low temperature growth of single crystal GaN on sapphire
73GaNComparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
74GaNDemonstration of flexible thin film transistors with GaN channels
75GaNEffect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
76GaNElectronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
77GaNFabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
78GaNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
79GaNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
80GaNInvestigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
81GaNLow temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
82GaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
83GaNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
84GaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
85GaNMetal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
86GaNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
87GaNPerspectives on future directions in III-N semiconductor research
88GaNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
89GaNStructure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
90GaNSubstrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
91GaNSubstrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
92GdNGadolinium nitride films deposited using a PEALD based process
93HfNxCharacteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
94HfNxPlasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
95HfO2An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
96HfO2Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
97HfO2Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
98HfONCharacterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
99InGaNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
100InGaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
101InNAtomic layer epitaxy for quantum well nitride-based devices
102InNEpitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
103InNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
104InNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
105InNLow-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
106InNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
107InNPerspectives on future directions in III-N semiconductor research
108LiPONAtomic Layer Deposition of the Solid Electrolyte LiPON
109LiPONSolid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
110MoCNPlasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
111NbNPlasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
112NbNPlasma-enhanced atomic layer deposition of superconducting niobium nitride
113NiConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
114PdPlasma-enhanced atomic layer deposition of palladium on a polymer substrate
115RuPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
116RuScalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
117RuNxIn Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
118RuTiNImproved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
119RuTiNPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
120SiAlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
121SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
122SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
123SiNxAtomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
124SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
125SiNxCorrelation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
126SiNxLow-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
127SiNxPlasma enhanced atomic layer deposition of silicon nitride using neopentasilane
128SiNxPlasma enhanced atomic layer deposition of SiNx:H and SiO2
129SiNxPlasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
130SiNxPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
131SiNxReactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
132SiNxRedeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
133SiNxRole of Surface Termination in Atomic Layer Deposition of Silicon Nitride
134SiNxSilicon Nitride and Silicon Oxide Thin Films by Plasma ALD
135SiNxSingle-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
136SiNxSteady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
137SiNxThermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
138SiO2Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
139SiONPlasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
140TaNxEffect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
141TaNxOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
142TaNxReaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
143TaNxTrilayer Tunnel Selectors for Memristor Memory Cells
144TiAlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
145TiAlNElectrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
146TiNALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
147TiNALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
148TiNAnnealing behavior of ferroelectric Si-doped HfO2 thin films
149TiNApproximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
150TiNAtomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
151TiNAtomic layer deposition of TiN for the fabrication of nanomechanical resonators
152TiNAtomic layer deposition of titanium nitride from TDMAT precursor
153TiNCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
154TiNComparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
155TiNConformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
156TiNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
157TiNDeposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
158TiNElectrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
159TiNFabrication and deformation of three-dimensional hollow ceramic nanostructures
160TiNFully CMOS-compatible titanium nitride nanoantennas
161TiNHigh aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
162TiNInvestigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
163TiNLow sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
164TiNMicrowave properties of superconducting atomic-layer deposited TiN films
165TiNNew materials for memristive switching
166TiNNitride memristors
167TiNOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
168TiNPlasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
169TiNPlasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
170TiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
171TiNPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
172TiNPlasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
173TiNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
174TiNReliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
175TiNRemote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
176TiNSilicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
177TiNSilicon nanowire networks for multi-stage thermoelectric modules
178TiNStrongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
179TiNSub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
180TiO2In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
181TiONAnalysis of nitrogen species in titanium oxynitride ALD films
182TiONAnalysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
183TiONNitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
184TiONPlasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
185TiONTitanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
186TiSiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
187WCA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
188WCAtomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
189WCCharacteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
190WCNPulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
191WNA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
192WNPlasma-enhanced atomic layer deposition of tungsten nitride
193ZrNAxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
194ZrNBarrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
195ZrNInfluence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
196ZrNLow temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
197ZrNProbing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
198ZrNTuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
199ZrONImproved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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