Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Type:
Journal
Info:
Journal of Applied Physics 118, 045307 (2015)
Date:
2015-07-16

Author Information

Name Institution
Christopher J. BrennanMIT Lincoln Laboratory
Christopher M. NeumannMIT Lincoln Laboratory
Steven A. VitaleMIT Lincoln Laboratory

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Substrates

SiO2

Notes

380