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Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 0, 0 (0), pp null
Date:
2018-03-19
Author Information
| Name | Institution |
|---|---|
| Tahsin Faraz | Eindhoven University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
| Marcel A. Verheijen | Eindhoven University of Technology |
| Cristian Van Helvoirt | Eindhoven University of Technology |
| Saurabh Karwal | Eindhoven University of Technology |
| Akhil Sharma | Eindhoven University of Technology |
| Vivek Beladiya | Friedrich-Schiller-Universität Jena |
| Adriana Szeghalmi | Friedrich-Schiller-Universität Jena |
| Dennis M. Hausmann | Lam Research Corporation |
| Jon Henri | Lam Research Corporation |
| Mariadriana Creatore | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma TiO2
Plasma TiN
Plasma HfO2
Plasma HfNx
Plasma SiO2
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Stress
Analysis: Wafer Curvature
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Wet Etch Resistance
Analysis: Custom
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| Si(100) |
| SiO2 |
Notes
| 1106 |