| 1 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 2 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 3 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 4 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 5 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 6 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 7 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 8 | The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology |
| 9 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 10 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 11 | New materials for memristive switching |
| 12 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 13 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 14 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 15 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 16 | Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View |
| 17 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 18 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 19 | Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays |
| 20 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 21 | Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays |
| 22 | Understanding and optimizing the floating body retention in FDSOI UTBOX |
| 23 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 24 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 25 | Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3 |
| 26 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 27 | Plasma-enhanced atomic layer deposition for plasmonic TiN |
| 28 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 29 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 30 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 31 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 32 | Non-destructive acoustic metrology and void detection in 3x50μm TSV |
| 33 | Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device |
| 34 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 35 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 36 | DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures |
| 37 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 38 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 39 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 40 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 41 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 42 | Fully CMOS-compatible titanium nitride nanoantennas |
| 43 | ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices |
| 44 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
| 45 | Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films |
| 46 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 47 | Film Uniformity in Atomic Layer Deposition |
| 48 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 49 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 50 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 51 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 52 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 53 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 54 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 55 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 56 | Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications |
| 57 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 58 | Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films |
| 59 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 60 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
| 61 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 62 | Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance |
| 63 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
| 64 | A high-density carbon fiber neural recording array technology |
| 65 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 66 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 67 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 68 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 69 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 70 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 71 | Plasma Enhanced Atomic Layer Deposition on Powders |
| 72 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 73 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
| 74 | Nitride memristors |
| 75 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 76 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 77 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 78 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 79 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 80 | A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance |
| 81 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 82 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 83 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 84 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 85 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 86 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 87 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 88 | Atomic layer deposition of titanium nitride for quantum circuits |
| 89 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 90 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 91 | Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride |
| 92 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 93 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 94 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 95 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 96 | Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices |
| 97 | Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs |
| 98 | Silicon nanowire networks for multi-stage thermoelectric modules |
| 99 | Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation |
| 100 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
| 101 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 102 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 103 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 104 | NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors |
| 105 | Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation |
| 106 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 107 | Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter |
| 108 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 109 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 110 | Fundamental beam studies of radical enhanced atomic layer deposition of TiN |
| 111 | Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode |
| 112 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 113 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 114 | Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride |
| 115 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
| 116 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
| 117 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 118 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 119 | Texture of atomic layer deposited ruthenium |
| 120 | Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si |
| 121 | Mechanical characterization of hollow ceramic nanolattices |
| 122 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 123 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 124 | Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper |
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
