SiNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing SiNx films returned 40 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
2Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
3Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
4Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
5Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
6Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
7Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
8CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
9Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
10Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
11Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
12Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
13Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
14Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
15Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
16Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
17Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
18Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
19Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
20Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
21Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
22Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
23Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
24Plasma enhanced atomic layer deposition of SiNx:H and SiO2
25Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
26Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
27Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
28Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
29Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
30Reliability and parasitic issues in GaN-based power HEMTs: a review
31Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
32Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
33SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
34Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
35Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
36Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
37The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
38Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
39Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
40Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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