HfO2 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfO2 films returned 100 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
3An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
4Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
5Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
6Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
7AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
8Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
9Breakdown and Protection of ALD Moisture Barrier Thin Films
10Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
11Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
12CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
13Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
14Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
15Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
16Damage evaluation in graphene underlying atomic layer deposition dielectrics
17Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
18Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
19Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
20Dynamic threshold voltage influence on Ge pMOSFET hysteresis
21Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
22Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
23Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
24Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
25Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
26Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
27Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
28Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
29Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
30Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
31Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide
32Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
33Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
34Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
35Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
36Forming-free metal-oxide ReRAM by oxygen ion implantation process
37Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
38Hafnia and alumina on sulphur passivated germanium
39HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
40High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
41High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
42High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
43Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
44Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
45Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
46Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
47Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
48Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
49In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
50Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
51Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
52Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
53Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
54Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
55Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
56Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
57Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
58Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
59Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
60Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
61Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
62Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
63Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
64Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
65Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
66Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
67Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
68On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
69Optical properties and bandgap evolution of ALD HfSiOx films
70Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
71Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
72Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
73Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
74Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
75Plasma-Modified Atomic Layer Deposition
76Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
77Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
78Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
79Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
80Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
81Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
82Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
83Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
84Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
85Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
86Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
87Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
88Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
89Symmetrical Al2O3-based passivation layers for p- and n-type silicon
90Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
91Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
92The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
93The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
94The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
95The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
96Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
97Trapped charge densities in Al2O3-based silicon surface passivation layers
98Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
99Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
100Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors


I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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