Publication Information

Title: Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor

Type: Conference Proceedings

Info: ECS Trans. 2010 volume 33, issue 2, 177-182

Date: 2010-10-12

DOI: http://dx.doi.org/10.1149/1.3485254

Author Information

Name

Institution

Cambridge NanoTech

Cambridge NanoTech

Cambridge NanoTech

Cambridge NanoTech

SAFC Hitech

SAFC Hitech

Cambridge NanoTech

Cambridge NanoTech

Films

Deposition Temperature Range N/A

210363-27-2

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Horiba Jobin Yvon UVISEL

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

Unknown

Precursor Characterization

TGA, Thermo Gravimetric Analysis

TA Instruments Q500 with EGA furnace

Substrates

Silicon

Keywords

Notes

Vapor pressure formula provided for the Nb precursor used.

System had Entegris gas purifiers on Ar, N2, and O2 gas lines.

75

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