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Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (9) G185-G187 (2004)
Date:
2004-01-30
Author Information
| Name | Institution |
|---|---|
| Jung Wook Lim | Electronics and Telecommunication Research Institute, (ETRI) |
| Sun Jin Yun | Electronics and Telecommunication Research Institute, (ETRI) |
| Yong-Hae Kim | Electronics and Telecommunication Research Institute, (ETRI) |
| Choong Yong Sohn | Electronics and Telecommunication Research Institute, (ETRI) |
| Jin Ho Lee | Electronics and Telecommunication Research Institute, (ETRI) |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
| SiO2 |
Notes
| 1167 |