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Gallium nitride thin films by microwave plasma-assisted ALD
Type:
Journal
Info:
Optical Materials Express, v. 9, n. 11, p. 4187--4193 (2019)
Date:
2019-09-10
Author Information
| Name | Institution |
|---|---|
| F. Romo-García | Universidad de Sonora |
| H. J. Higuera-Valenzuela | Universidad de Sonora |
| D. Cabrera-German | Universidad de Sonora |
| D. Berman-Mendoza | Universidad de Sonora |
| A. Ramos-Carrazco | Universidad de Sonora |
| O. E. Contreras | Universidad Nacional Autónoma de México |
| R. García-Gutierrez | Universidad de Sonora |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Optical Properties
Analysis: CL, Cathodoluminescence
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si with native oxide |
Notes
| 1693 |