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Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 23, L5-L8 (2005)
Date:
2005-04-25
Author Information
| Name | Institution |
|---|---|
| S. B. S. Heil | Eindhoven University of Technology |
| E. Langereis | Eindhoven University of Technology |
| A. Kemmeren | Philips |
| Fred Roozeboom | Philips |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Nucleation
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Substrates
| SiO2 |
Notes
| 1258 |