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Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
Type:
Journal
Info:
Scientific Reports 12, Article number: 15756 (2022)
Date:
2022-09-09
Author Information
| Name | Institution |
|---|---|
| Yoenju Choi | Kyung Hee University |
| Taehoon Kim | Wonik IPS Ltd. |
| Hangyul Lee | Wonik IPS Ltd. |
| Jusung Park | Wonik IPS Ltd. |
| Juhwan Park | Wonik IPS Ltd. |
| Dongho Ryu | Wonik IPS Ltd. |
| Woojin Jeon | Kyung Hee University |
Films
Plasma SiO2
Plasma SiO2
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Substrates
| Silicon |
Notes
| 1696 |