Ammonia, NH3, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 158 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1Al2O3AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2Al2O3Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3Al2O3Nitride passivation of the interface between high-k dielectrics and SiGe
4AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
5AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
6AlNA comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7AlNA rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
8AlNAtomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
9AlNComparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
10AlNComparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
11AlNConformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
12AlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
13AlNCrystalline growth of AlN thin films by atomic layer deposition
14AlNCurrent transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
15AlNEffect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
16AlNElectrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
17AlNGaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
18AlNGate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
19AlNHigh-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
20AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
21AlNImpact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
22AlNImproved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
23AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
24AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
25AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
26AlNLow-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
27AlNOptical properties of AlN thin films grown by plasma enhanced atomic layer deposition
28AlNPassivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
29AlNPEALD AlN: controlling growth and film crystallinity
30AlNPlasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
31AlNPlasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
32AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
33AlNProperties of AlN grown by plasma enhanced atomic layer deposition
34AlNSelf-limiting growth of GaN using plasma-enhanced atomic layer deposition
35AlNSelf-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
36AlNSilicon surface passivation with atomic layer deposited aluminum nitride
37AlNStructural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
38AlNSuppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
39AlNTemplate-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
40AlNThe Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
41AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
42AlNThin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
43AlNTiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
44AlONImprovement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
45AlONPlasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
46BNLarge-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
47CoDegradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
48CoGrowth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
49CoHot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
50CoPlasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
51Cu3NCarbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
52GaNAtomic layer deposition of GaN at low temperatures
53GaNElectron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
54GaNElectronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
55GaNGrowth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
56GaNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
57GaNInfrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
58GaNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
59GaNLow-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
60GaNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
61GaNSelf-Limiting Growth of GaN at Low Temperatures
62GaNSelf-limiting growth of GaN using plasma-enhanced atomic layer deposition
63GaNTemperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
64GaNUltralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
65GaNUniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
66HfNxA comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
67HfO2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
68HfONCharacterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
69HfONEnhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
70HfONImprovement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
71InNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
72MnOxDeposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
73MnOxManganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
74NiCharacteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
75NiFormation of Ni silicide from atomic layer deposited Ni
76NiImprovement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
77NiPlasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
78NiPlasma-Enhanced Atomic Layer Deposition of Ni
79PtPlasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
80RuAtomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
81RuAtomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
82RuCorrelation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
83RuDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
84RuEffects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
85RuImprovement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
86RuIntegration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
87RuPEALD of a Ruthenium Adhesion Layer for Copper Interconnects
88RuPotassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
89RuPreparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
90RuRu thin film grown on TaN by plasma enhanced atomic layer deposition
91RuScalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
92RuThe Properties of Cu Thin Films on Ru Depending on the ALD Temperature
93RuThe properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
94RuThermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
95Ru-WCNDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
96RuCoEmerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
97RuSiNPlasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
98RuTaNAtomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
99RuTaNMicrostructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
100RuTaNNucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
101SiNxAtomic layer controlled deposition of silicon nitride with self-limiting mechanism
102SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
103SiNxChallenges in atomic layer deposition of carbon-containing silicon-based dielectrics
104SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
105SiNxDielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
106SiNxLow-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
107SiNxLow-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
108SiNxReactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
109SiNxRole of Surface Termination in Atomic Layer Deposition of Silicon Nitride
110SiNxTemperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
111SiNxThe effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
112SiO2Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
113TaCNThe Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
114TaNxGrowth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
115TaNxIntegration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
116TaNxPlasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
117TaNxRu thin film grown on TaN by plasma enhanced atomic layer deposition
118TaNxThermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
119TaNxTrilayer Tunnel Selectors for Memristor Memory Cells
120TiAlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
121TiAlNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
122TiCNPlasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
123TiCNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
124TiNAtomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
125TiNAtomic layer deposition of titanium nitride from TDMAT precursor
126TiNCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
127TiNControllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
128TiNExcellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
129TiNFerroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
130TiNHighly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
131TiNHot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
132TiNNiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
133TiNPhotoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
134TiNPlasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
135TiNPotassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
136TiNReliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
137TiNThermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
138TiNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
139TiNTiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
140TiNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
141TiONAnalysis of nitrogen species in titanium oxynitride ALD films
142TiONAnalysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
143TiONPlasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
144VNLow temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
145WCCharacteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
146WCNCharacteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
147WCNPulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
148WCNWork function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
149WNA New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
150WNEffects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
151WNInvestigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
152WNMethod to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
153WNPlasma-enhanced atomic layer deposition of tungsten nitride
154WNPulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
155ZnONLocal Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
156ZnONUltraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
157ZrONEnhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
158ZrONImpact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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