Ammonia, NH3, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 169 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1Al2O3AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2Al2O3Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3Al2O3Nitride passivation of the interface between high-k dielectrics and SiGe
4AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
5AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
6AlNA comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7AlNA rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
8AlNAlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
9AlNAtomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
10AlNComparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
11AlNComparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
12AlNConformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
13AlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
14AlNCrystalline growth of AlN thin films by atomic layer deposition
15AlNCurrent transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
16AlNEffect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
17AlNElectrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
18AlNGaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
19AlNGate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
20AlNHigh-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
21AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
22AlNImpact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
23AlNImproved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
24AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
25AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
26AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
27AlNLow-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
28AlNOptical properties of AlN thin films grown by plasma enhanced atomic layer deposition
29AlNPassivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
30AlNPEALD AlN: controlling growth and film crystallinity
31AlNPlasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
32AlNPlasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
33AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
34AlNProperties of AlN grown by plasma enhanced atomic layer deposition
35AlNSelf-limiting growth of GaN using plasma-enhanced atomic layer deposition
36AlNSelf-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
37AlNSilicon surface passivation with atomic layer deposited aluminum nitride
38AlNStructural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
39AlNSuppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
40AlNSurface passivation of GaAs nanowires by the atomic layer deposition of AlN
41AlNTemplate-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
42AlNThe Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
43AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
44AlNThin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
45AlNTiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
46AlONImprovement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
47AlONInterface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
48AlONPlasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
49BNLarge-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
50CoCharacteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
51CoDegradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
52CoGrowth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
53CoHigh-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
54CoHot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
55CoPlasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
56CoSpontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
57Cu3NCarbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
58GaNAtomic layer deposition of GaN at low temperatures
59GaNElectron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
60GaNElectronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
61GaNGrowth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
62GaNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
63GaNInfrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
64GaNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
65GaNLow-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
66GaNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
67GaNSelf-Limiting Growth of GaN at Low Temperatures
68GaNSelf-limiting growth of GaN using plasma-enhanced atomic layer deposition
69GaNTemperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
70GaNUltralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
71GaNUniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
72HfNxA comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
73HfO2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
74HfONCharacterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
75HfONEnhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
76HfONImprovement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
77InNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
78MnOxDeposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
79MnOxManganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
80NiCharacteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
81NiFormation of Ni silicide from atomic layer deposited Ni
82NiImprovement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
83NiPlasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
84NiPlasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
85NiPlasma-Enhanced Atomic Layer Deposition of Ni
86NiSpontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
87PtPlasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
88RuAtomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
89RuAtomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
90RuCorrelation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
91RuDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
92RuEffects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
93RuFormation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
94RuImprovement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
95RuIntegration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
96RuPEALD of a Ruthenium Adhesion Layer for Copper Interconnects
97RuPotassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
98RuPreparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
99RuRu thin film grown on TaN by plasma enhanced atomic layer deposition
100RuScalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
101RuThe Properties of Cu Thin Films on Ru Depending on the ALD Temperature
102RuThe properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
103RuThermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
104Ru-WCNDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
105RuCoEmerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
106RuSiNPlasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
107RuTaNAtomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
108RuTaNMicrostructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
109RuTaNNucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
110SiNxAtomic layer controlled deposition of silicon nitride with self-limiting mechanism
111SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
112SiNxChallenges in atomic layer deposition of carbon-containing silicon-based dielectrics
113SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
114SiNxDielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
115SiNxLow-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
116SiNxLow-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
117SiNxReactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
118SiNxRole of Surface Termination in Atomic Layer Deposition of Silicon Nitride
119SiNxTemperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
120SiNxThe effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
121SiO2Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
122TaCNThe Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
123TaNxGrowth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
124TaNxIntegration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
125TaNxPlasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
126TaNxRu thin film grown on TaN by plasma enhanced atomic layer deposition
127TaNxThermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
128TaNxTrilayer Tunnel Selectors for Memristor Memory Cells
129TiAlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
130TiAlNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
131TiCNPlasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
132TiCNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
133TiNAtomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
134TiNAtomic layer deposition of titanium nitride from TDMAT precursor
135TiNCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
136TiNControllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
137TiNExcellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
138TiNFerroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
139TiNHighly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
140TiNHot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
141TiNNiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
142TiNPhotoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
143TiNPlasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
144TiNPotassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
145TiNPreparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
146TiNReliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
147TiNThermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
148TiNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
149TiNTiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
150TiNTiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
151TiNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
152TiONAnalysis of nitrogen species in titanium oxynitride ALD films
153TiONAnalysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
154TiONPlasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
155VNLow temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
156WCCharacteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
157WCNCharacteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
158WCNPulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
159WCNWork function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
160WNA New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
161WNEffects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
162WNInvestigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
163WNMethod to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
164WNPlasma-enhanced atomic layer deposition of tungsten nitride
165WNPulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
166ZnONLocal Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
167ZnONUltraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
168ZrONEnhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
169ZrONImpact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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