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Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 98, 014308 (2005)
Date:
2005-04-27
Author Information
| Name | Institution |
|---|---|
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
| Christophe Detavernier | IBM |
| O. van der Straten | IBM |
| S. M. Rossnagel | IBM |
| A. J. Kellock | IBM |
| D.-G. Park | IBM |
Films
Plasma TaNx
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Characteristic: Diffusion Barrier Properties
Analysis: Optical Scattering
Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe
Substrates
| Si(001) |
| SiO2 |
Notes
| 1260 |