Publication Information

Title: Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1115-1117, 2013

Date: 2013-08-06

DOI: http://dx.doi.org/10.1109/LED.2013.2274429

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Deposition Temperature Range N/A

75-24-1

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Substrates

AlGaN

Keywords

Passivation

Notes

580

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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