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Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
Type:
Journal
Info:
Mater. Res. Soc. Symp. Proc. Vol. 863
Date:
2005-06-01
Author Information
| Name | Institution |
|---|---|
| S. B. S. Heil | Eindhoven University of Technology |
| E. Langereis | Eindhoven University of Technology |
| Fred Roozeboom | Philips |
| A. Kemmeren | Philips |
| N. P. Pham | Delft University of Technology |
| Pasqualina M. Sarro | Delft University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiO2 |
Notes
| 1257 |