Publication Information

Title: Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer

Type: Conference Proceedings

Info: 2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Date: 2015-04-27

DOI: http://dx.doi.org/10.1109/VLSI-TSA.2015.7117579

Author Information

Name

Institution

National Chiao Tung University

National Chiao Tung University

Films

Plasma AlON using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

7727-37-9

Plasma AlN using Unknown

Deposition Temperature Range N/A

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Substrates

GeO2

Keywords

Notes

545

Disclaimer

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