Publication Information

Title: Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: J. Nanosci. Nanotechnol. 2011, Vol. 11, No. 1, p.671-674.

Date: 2011-01-01

DOI: http://dx.doi.org/10.1166/jnn.2011.3222

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Pusan National University

Korea Advanced Institute of Science and Technology

Korea Institute of Materials Science

Dankook University

Pusan National University

Films

Plasma RuTiN using Custom

Deposition Temperature Range N/A

32992-96-4

7727-37-9

1333-74-0

3275-24-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

SEM, Scanning Electron Microscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Microstructure

XRD, X-Ray Diffraction

Unknown

Microstructure

TEM, Transmission Electron Microscope

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Barrier Characteristics

Four-point Probe

Unknown

Barrier Characteristics

XRD, X-Ray Diffraction

Unknown

Substrates

SiO2

Keywords

Notes

Ru deposition used N2/H2 plasma while TiN deposition used only N2 plasma.

119

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