Publication Information

Title: Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

Type: Journal

Info: Applied Physics Letters 103, 013107 (2013)

Date: 2013-06-17

DOI: http://dx.doi.org/10.1063/1.4813016

Author Information

Name

Institution

Kyonggi University

Kyonggi University

Kyonggi University

Films

Other Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7732-18-5

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Graphene

Keywords

Notes

TMA + H2O is a guess.

606

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