Publication Information

Title: Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma

Type: Journal

Info: Journal of Vacuum Science & Technology A 33, 031502 (2015)

Date: 2015-03-02

DOI: http://dx.doi.org/10.1116/1.4915122

Author Information

Name

Institution

University of Alberta

University of Alberta

Films

Deposition Temperature Range = 100-350C

19756-04-8

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000D

Refractive Index

Ellipsometry

J.A. Woollam M-2000D

Thickness

XRR, X-Ray Reflectivity

Rigaku Ultima IV

Fermi Level Electronic Structure

valence band XPS

Kratos Analytical Axis Ultra DLD

Resistivity, Sheet Resistance

van der Pauw sheet resistance

Keithley 4200-SCS

TCR, Temperature Coefficient of Resistivity

Unknown

Unknown

Substrates

Si(111)

SiO2

Keywords

Interconnect

Diffusion Barrier

Notes

Kurt J. Lesker ALD150LX PEALD of ZrN study.

340

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