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Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
Type:
Journal
Info:
Nano Energy 43 (2018) 259-269
Date:
2017-11-18
Author Information
| Name | Institution |
|---|---|
| Kwangeun Kim | University of Wisconsin - Madison |
| Mengyuan Hua | Hong Kong University of Science and Technology |
| Dong Liu | University of Wisconsin - Madison |
| Jisoo Kim | University of Wisconsin - Madison |
| Kevin J. Chen | Hong Kong University of Science and Technology |
| Zhenqiang Ma | University of Wisconsin - Madison |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Core Energy Levels
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| GaN |
Notes
| Al2O3 listed as PEALD with TMA and H2O, which is not unheard of, but would typically be given additional clarification. |
| 1076 |