Publication Information

Title: Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects

Type: Journal

Info: phys. stat. sol. (a) 202, No. 14, R164–R166 (2005)

Date: 2005-10-20

DOI: http://dx.doi.org/10.1002/pssa.200521296

Author Information

Name

Institution

Korea Institute of Science and Technology

Korea Institute of Science and Technology

Films

Plasma WCN using Custom

Deposition Temperature Range N/A

7783-82-6

7727-37-9

74-82-8

Plasma WCN using Custom

Deposition Temperature Range N/A

7783-82-6

7664-41-7

74-82-8

Plasma WN using Custom

Deposition Temperature Range N/A

7783-82-6

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Resistivity, Sheet Resistance

Unknown

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Barrier Characteristics

TEM, Transmission Electron Microscope

Unknown

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

SiO2 surface pretreated with N2/H2 plasma prior to film deposition.

54

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