Publication Information

Title: Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

Type: Journal

Info: Inorganic Materials, 2015, Vol. 51, No. 7, pp. 728-735

Date: 2014-11-24

DOI: http://dx.doi.org/10.1134/S0020168515070158

Author Information

Name

Institution

North-Caucasus Federal University

North-Caucasus Federal University

North-Caucasus Federal University

North-Caucasus Federal University

North-Caucasus Federal University

North-Caucasus Federal University

Films

Plasma AlN using Beneq TFS-200

Deposition Temperature Range = 80-260C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

SENTECH SE 800

Refractive Index

Ellipsometry

SENTECH SE 800

Transmittance

Optical Transmission

FSM-1201 FTIR

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

JEOL JAMP-9510F

Substrates

Si(111)

Keywords

Notes

398

Disclaimer

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