Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals

Type: Journal

Info: Journal of The Electrochemical Society, 153 (6) G578-G581 (2006)

Date: 2006-04-19

DOI: http://dx.doi.org/10.1149/1.2193335

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Samsung Electronics Co.

Samsung Electronics Co.

Korea Advanced Institute of Science and Technology

Films

Plasma TiN using Custom

Deposition Temperature Range N/A

3275-24-9

7727-37-9

Plasma Ru using Custom

Deposition Temperature Range N/A

32992-96-4

7727-37-9

1333-74-0

Plasma RuTiN using Custom

Deposition Temperature Range N/A

32992-96-4

3275-24-9

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

SEM, Scanning Electron Microscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Diffusion Barrier Properties

Anneal

Unknown

Adhesion

Scotch Tape Test

Unknown

Substrates

SiO2

Silicon

Keywords

Copper

Interconnect

Diffusion Barrier

Notes

Silicon substrate HF treated.

72

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