Publication Information

Title: Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

Type: Journal

Info: Journal of Physics: Conference Series 652 (2015) 012034

Date: 2015-09-06

DOI: http://dx.doi.org/10.1088/1742-6596/652/1/012034

Author Information

Name

Institution

North-Caucasus Federal University

North-Caucasus Federal University

North-Caucasus Federal University

North-Caucasus Federal University

Films

Plasma AlN using Beneq TFS-200

Deposition Temperature Range = 150-280C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

SENTECH SE 800

Refractive Index

Ellipsometry

SENTECH SE 800

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Transmittance

FTIR, Fourier Transform InfraRed spectroscopy

FSM-1201 FTIR

Substrates

Si(111)

Keywords

Notes

399

Disclaimer

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